An electrostatic discharge esd protection circuit applied to integrated circuits

Abstract

An electrostatic discharge (ESD) protective circuit for an integrated circuit comprises a master ESD protective circuit (401), a resistor (402), and a slave ESD protective circuit (403). The master ESD protective circuit (401) at least comprises one high-voltage N-trench MOS transistor (T1). A gate, a source and a body of the high-voltage N-trench MOS transistor (T1) are grounded, and a drain of the high-voltage N-trench MOS transistor (T1) is connected to a pin pad of an integrated circuit. The slave ESD protective circuit (403) at least comprises one low-voltage N-trench MOS transistor (T2). A gate, a source and a body of the low-voltage N-trench MOS transistor (T2) are grounded, and a drain of the low-voltage N-trench MOS transistor (T2) is connected to the drain of the high-voltage N-trench MOS transistor (T1) by means of the resistor (402), and is connected to a protected circuit (404) in the integrated circuit. By means of the electrostatic discharge (ESD) protective circuit, an ESD protective circuit having a small leaked current can be implemented, thereby reducing power consumption of a system.

Description

technical field [0001] The invention relates to the field of electronic circuits, in particular to an electrostatic discharge ESD protection circuit applied to integrated circuits. Background technique [0002] ESD (Electrostatic Discharge, Electrostatic Discharge) is one of the most important reliability issues in today's integrated circuits. The ESD phenomenon can mainly cause the following damage to electronic devices: in semiconductor devices, the oxide film is ruptured due to dielectric breakdown; the metal wire is melted due to overheating caused by EOS (Electrical Overstress); due to the parasitic PNPN structure Cause CMOS (Complementary Metal-Oxide-Semiconductor, Complementary Metal-Oxide-Semiconductor) devices to lock up; cause hidden defects in the component structure, they do not fail immediately, but cause intermittent failures and long-term reliability problems, this The damage is very weak and difficult to find, that is, potential damage. The loss caused by ES...

AI Technical Summary

Problems solved by technology

The ESD phenomenon can mainly cause the following damage to electronic devices: in semiconductor devices, the oxide film is broken due to dielectric breakdown; the metal wire is melted due to overheating caused by EOS (Electrical Overstress); due to the parasitic PNPN structure Lead to CMOS (Complementary Metal-Oxide-Semiconductor, Complementary Metal-Oxide-Semiconductor) device lock-up; cause hidden defects in the component structure, they do not fail immediately, but cause intermittent failures and long-term reliability problems, this The damage is very weak and difficult to find, that is, potential damage. The loss caused by ESD in the integrated circuit industry is a very serious problem. The failure mechanism caused by ESD is mainly thermal breakdown and electrical breakdown

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