Etchant composition for copper-based metal layer, and method of manufacturing array substrate of display device
A technology of composition and etchant, which is applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve the problems of poor etching profile and etching residue, and it is difficult to prevent metal oxide layer damage, and achieve excellent Etching linearity, excellent etching profile, no etching residue effect
Active Publication Date: 2017-10-10
DONGWOO FINE CHEM CO LTD
View PDF7 Cites 2 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Otherwise, poor etch profiles and etch residues may occur
[0006] Furthermore, it is difficult to prevent damage to the metal oxide layer to be protected, other than the layer to be etched
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
preparation example Construction
[0065] Preparation of Etchant Compositions
[0066] 6 kg of each of the etchant compositions of Examples 1 to 7 and Comparative Examples 1 to 8 were prepared using the components in the amounts shown in Table 1 below.
[0067] [Table 1]
[0068]
[0069] Note that in Table 1,
[0070] ATZ: aminotetrazole
[0071] NHP: Monosodium Phosphate
[0072] APM: Ammonium Dihydrogen Phosphate
[0073] PA: Potassium acetate
[0074] AA: Ammonium acetate
[0075] SA: Sodium acetate
[0076] TEG: triethylene glycol
[0077] IDA: iminodiacetic acid
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses an etchant composition for a copper-based metal layer comprising a predetermined amount of hydrogen peroxide, an azole compound, a water-soluble compound having a nitrogen atom and a carboxyl group in the molecule, a phosphate, an acetate, a polyol surfactant And water. There is also provided a method of manufacturing an array substrate for a display device using the etchant composition.
Description
technical field [0001] The present invention relates to an etchant composition for a copper-based metal layer and a method of manufacturing an array substrate for a display device using the etchant composition. Background technique [0002] In semiconductor devices, forming metal lines on a substrate typically involves forming a metal layer using sputtering, applying a photoresist, exposing and developing such that the photoresist is formed in selected areas and etching, where each A cleaning process is performed before and after a single process. The etching process is performed such that the metal layer is left in selected regions by using the photoresist as a mask, and the etching process may include dry etching using plasma or the like or wet etching using an etchant composition. [0003] Lines traditionally used for gate electrodes and source / drain electrodes are formed from metal layers including aluminum or its alloys and additional metals. Aluminum is cheap and has...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/18H01L21/3213H01L21/77
CPCC23F1/18H01L21/32134H01L27/1259
Inventor 梁承宰朴昇煜李恩远
Owner DONGWOO FINE CHEM CO LTD
PatSnap Eureka turns technology decisions into work you can execute. Powered by our Innovation Knowledge Graph, it runs expert workflows across engineering, life sciences, materials and intellectual property. Get your review-ready output in minutes.
