Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

A post-processing method and application of double perovskite crystals

A double perovskite and crystal technology, which is applied in the field of post-processing of double perovskite crystals, can solve the problems of low carrier mobility, carrier lifetime product product, large leakage current, and limitation of preparation methods, and achieve Effects of improving mobility and defect density, improving performance, and reducing defect density

Active Publication Date: 2019-03-08
HUAZHONG UNIV OF SCI & TECH
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Crystals with low leakage current and high μτ product are very beneficial for radiation detection, but limited by the preparation method, the current Cs 2 wxya 6 The crystal still has defects such as large leakage current and low product of carrier mobility and carrier lifetime (μτ) of the crystal, so it is very necessary to post-process the crystal to improve the radiation detection performance of the crystal
Currently, there is no Cs 2 wxya 6 Crystal post-processing method, therefore, it is very necessary to invent a post-processing method to improve the Cs 2 wxya 6 crystal quality

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A post-processing method and application of double perovskite crystals
  • A post-processing method and application of double perovskite crystals
  • A post-processing method and application of double perovskite crystals

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] Cs in this example 2 AgBr 6 The post-processing method of the crystal specifically includes the following steps:

[0030] (1) Use tweezers to remove the Cs grown in the solution 2 AgBr 6 take out;

[0031] (2) Cs to be taken out 2 AgBr 6 Place in an oven at 100°C, and anneal in air for 30 minutes;

[0032] (3) Take out the crystal in step (2) from the oven, and place it in the air to cool for 5 minutes;

[0033] (4) prepare a sufficient amount of isopropanol solution that can completely immerse the crystal;

[0034] (5) Soak the crystal in step (3) in the isopropanol solution prepared in step (4) for 10 min;

[0035] (6) Place the crystal in step (5) in the air to dry naturally, that is, complete the post-processing of the crystal, and take out the crystal for performance testing;

[0036] (7) Get post-treated crystals and no post-treated crystals, i.e. the control sample, vapor-deposit 40nm thick gold electrodes on its upper and lower surfaces, and perform a per...

Embodiment 2

[0041] (1) Use tweezers to remove the Cs grown in the solution 2 AgBr 6 take out;

[0042] (2) Cs to be taken out 2 AgBr 6 Placed in an oven at 200°C, and annealed in air for 120 minutes;

[0043] (3) The crystal in step (2) is taken out from the oven, and placed in the air to cool for 15 minutes;

[0044] (4) prepare a sufficient amount of ethanol solution that can completely immerse the crystal;

[0045] (5) Soak the crystal in step (3) in the ethanol solution prepared in step (4) for 15 minutes;

[0046] (6) Place the crystal in step (5) in the air to dry naturally, that is, complete the post-processing of the crystal, and take out the crystal for performance testing;

[0047] (7) Get post-treated crystals and no post-treated crystals, i.e. the control sample, vapor-deposit 40nm thick gold electrodes on its upper and lower surfaces, and perform a performance test;

[0048] (8) Use a semiconductor analyzer to carry out I-V tests on the above-mentioned post-treatment c...

Embodiment 3

[0052] (1) Use tweezers to remove the Cs grown in the solution 2 AgBiCl 6 take out;

[0053] (2) Cs to be taken out 2 AgBiCl 6 Place in an oven at 150°C, and anneal in air for 90 minutes;

[0054] (3) Take out the crystal in step (2) from the oven, and place it in the air to cool for 10 minutes;

[0055] (4) prepare a sufficient amount of acetone solution that can completely immerse the crystal;

[0056] (5) Soak the crystal in step (3) in the acetone solution prepared in step (4) for 10 min;

[0057] (6) Place the crystal in step (5) in the air to dry naturally, that is, complete the post-processing of the crystal, and take out the crystal for performance testing;

[0058] (7) Get post-treated crystals and no post-treated crystals, i.e. the control sample, vapor-deposit 40nm thick gold electrodes on its upper and lower surfaces, and perform a performance test;

[0059] (8) Use a semiconductor analyzer to carry out I-V tests on the above-mentioned post-treatment crystal...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a post-processing method and application of double perovskite crystals. The post-processing method of double perovskite crystals comprises the following steps: performing annealing treatment on Cs2AgBiX6 double perovskite crystals; then cooling; and performing surface passivation treatment on the cooled crystals by means of a solvent to improve the mobility of the double perovskite crystals and reduce the surface recombination rate. The invention improves the technological process adopted in the key post-processing and the specific condition parameters adopted in each process step, therefore, the problems of the double perovskite Cs2AgBiX6 crystals in the prior art that the probability of occurrence of Ag and Bi dislocation is high, the internal defects of the crystals are more, the product of the carrier mobility multiply by the carrier lifetime ([mu] [tau]) of the crystals is not high are effectively solved; moreover, the crystals obtained by means of the post-processing method disclosed by the invention are especially suitable for using in radiation detectors.

Description

technical field [0001] The invention belongs to the field of post-treatment of double perovskite crystals, more specifically, relates to a post-treatment method and application of double perovskite crystals, the method can reduce double perovskite crystals (such as Cs 2 wxya 6 Crystal) defects, reduce the leakage current of the crystal, increase the μτ product (mobility × average life) of the crystal and reduce the surface recombination rate s. Background technique [0002] Cs 2 wxya 6 It is a perovskite material with superior photoelectric performance and large average atomic number, which is very suitable as a radiation detector material. Crystals with low leakage current and high μτ product are very beneficial for radiation detection, but limited by the preparation method, the current Cs 2 wxya 6 The crystal still has defects such as large leakage current and low product of carrier mobility and carrier lifetime (μτ) of the crystal, so it is very necessary to post-pro...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/09
CPCH01L31/09H01L31/18Y02P70/50
Inventor 唐江巫皓迪牛广达潘伟程罗家俊尹力骁
Owner HUAZHONG UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com