Passive position sensitive detector based on graphene-silicon (Si) heterojunction
A silicon heterojunction and graphene technology, applied in semiconductor devices, sustainable manufacturing/processing, electrical components, etc., can solve problems such as power consumption, working wavelength limitation, and minimum limit detection power, and achieve power consumption, no The effect of power consumption
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Embodiment 1
[0025] The passive position-sensitive detector based on the graphene-silicon heterojunction of this embodiment, the preparation process is as follows:
[0026] 1) The CVD-grown 11 mm*11 mm single-layer graphene was transferred to a 13 mm*13 mm Si substrate by wet transfer technology, and the resistivity of the Si substrate was 10 Ω cm.
[0027] 2) Deposit four symmetrical gold electrodes with a length of 6 mm, a width of 1 mm, and a thickness of 50 nm on the graphene by masking method and metal thin film deposition technology, and the distance between two opposite electrodes in the same direction is 8 mm.
[0028] 3) An aluminum electrode with a length of 3 mm, a width of 3 mm and a thickness of 100 nm is deposited on the center of the back of the Si substrate by mask method and metal thin film deposition technology.
[0029] 4) Use a laser with a wavelength of 532 nm to irradiate the graphene region between the electrodes, and measure the potential difference between the grap...
Embodiment 2
[0032] The passive position-sensitive detector based on the graphene-silicon heterojunction of this embodiment, the preparation process is as follows:
[0033] 1) The CVD-grown 11 mm*11 mm single-layer graphene was transferred to a 13 mm*13 mm Si substrate by wet transfer technology, and the resistivity of the Si substrate was 10 Ω cm.
[0034] 2) Repeat the transfer of 1) to obtain bilayer graphene on Si substrate
[0035] 3) Deposit four symmetrical gold electrodes with a length of 6 mm, a width of 1 mm, and a thickness of 50 nm on the graphene by mask method and metal thin film deposition technology, and the distance between two opposite electrodes in the same direction is 8 mm.
[0036] 4) An aluminum electrode with a length of 3 mm, a width of 3 mm and a thickness of 100 nm is deposited on the center of the back of the Si substrate by mask method and metal thin film deposition technology.
[0037] 5) Use a laser with a wavelength of 633 nm to irradiate the graphene regio...
Embodiment 3
[0040] The passive position-sensitive detector based on the graphene-silicon heterojunction of this embodiment, the preparation process is as follows:
[0041] 1) The CVD-grown 11 mm*11 mm single-layer graphene was transferred to a 13 mm*13 mm Si substrate by wet transfer technology, and the resistivity of the Si substrate was 10 Ω cm.
[0042] 2) Deposit four symmetrical gold electrodes with a length of 6 mm, a width of 1 mm, and a thickness of 50 nm on the graphene by masking method and metal thin film deposition technology, and the distance between two opposite electrodes in the same direction is 8 mm.
[0043] 3) An aluminum electrode with a length of 3 mm, a width of 3 mm and a thickness of 100 nm is deposited on the center of the back of the Si substrate by mask method and metal thin film deposition technology.
[0044] 4) Use a laser with a wavelength of 1319 nm to irradiate the graphene region between the electrodes, and measure the potential difference between the gra...
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