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Passive position-sensitive detector, its preparation method and its measurement method

A measurement method and detector technology, applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as power consumption, working wavelength limitation, minimum limit detection power, etc., to achieve power consumption, reactive power consumption effect

Active Publication Date: 2019-03-08
泰州巨纳新能源有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

To solve many problems of existing position sensitive detectors, including power consumption (active), minimum limit detection power, working wavelength limitation, etc.

Method used

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  • Passive position-sensitive detector, its preparation method and its measurement method
  • Passive position-sensitive detector, its preparation method and its measurement method
  • Passive position-sensitive detector, its preparation method and its measurement method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] The passive position-sensitive detector based on the graphene-silicon heterojunction of this embodiment, the preparation process is as follows:

[0026] 1) Transfer CVD-grown 11mm*11mm single-layer graphene to a 13mm*13mm Si substrate by wet transfer technology, and the resistivity of the Si substrate is 10Ωcm.

[0027] 2) Deposit four symmetrical gold electrodes with a length of 6mm, a width of 1mm and a thickness of 50nm on the graphene by mask method and metal thin film deposition technology, and the distance between the two opposite electrodes in the same direction is 8mm.

[0028] 3) An aluminum electrode with a length of 3mm, a width of 3mm and a thickness of 100nm is deposited on the center of the back of the Si substrate by mask method and metal thin film deposition technology.

[0029] 4) Use a laser with a wavelength of 532nm to irradiate the graphene region between the electrodes, and measure the potential difference between the graphene upper electrode and t...

Embodiment 2

[0032] The passive position-sensitive detector based on the graphene-silicon heterojunction of this embodiment, the preparation process is as follows:

[0033] 1) Transfer CVD-grown 11mm*11mm single-layer graphene to a 13mm*13mm Si substrate by wet transfer technology, and the resistivity of the Si substrate is 10Ωcm.

[0034] 2) Repeat the transfer of 1) to obtain double-layer graphene on the Si substrate

[0035] 3) Deposit four symmetrical gold electrodes with a length of 6mm, a width of 1mm and a thickness of 50nm on the graphene by mask method and metal thin film deposition technology, and the distance between the two electrodes facing each other in the same direction is 8mm.

[0036] 4) An aluminum electrode with a length of 3mm, a width of 3mm and a thickness of 100nm is deposited on the center of the back of the Si substrate by mask method and metal thin film deposition technology.

[0037] 5) Use a laser with a wavelength of 633nm to irradiate the graphene region bet...

Embodiment 3

[0040] The passive position-sensitive detector based on the graphene-silicon heterojunction of this embodiment, the preparation process is as follows:

[0041] 1) Transfer CVD-grown 11mm*11mm single-layer graphene to a 13mm*13mm Si substrate by wet transfer technology, and the resistivity of the Si substrate is 10Ωcm.

[0042] 2) Deposit four symmetrical gold electrodes with a length of 6mm, a width of 1mm and a thickness of 50nm on the graphene by mask method and metal thin film deposition technology, and the distance between the two opposite electrodes in the same direction is 8mm.

[0043] 3) An aluminum electrode with a length of 3mm, a width of 3mm and a thickness of 100nm is deposited on the center of the back of the Si substrate by mask method and metal thin film deposition technology.

[0044] 4) Use a laser with a wavelength of 1319nm to irradiate the graphene region between the electrodes, and measure the potential difference between the graphene upper electrode and ...

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Abstract

The invention provides a passive position sensitive detector based on a graphene-silicon (Si) heterojunction. The detector comprises a Si substrate, a graphene unit arranged at the Si substrate, a metal electrode arranged at the graphene unit, and a metal electrode arranged at the back of the Si substrate. The Si substrate is a light-doped Si substrate with the electrical resistivity of 1 to 10 omega cm. The graphene unit is a single-layer or dual-layer graphene unit or one with three to ten layers. The metal electrode arranged on the graphene unit is made of gold, nickel or platinum; and the metal electrode at the back of the Si substrate is made of aluminum. The detector has the following beneficial effects: power consumption is reduced; and performance indexes like the lowest limit detection power and the operating wavelength of the existing silicon-based position sensitivity detector can be enhanced.

Description

technical field [0001] The invention relates to a passive position sensitive detector based on a graphene-silicon heterojunction, belonging to the field of optoelectronic devices. Background technique [0002] The position sensitive detector is a position detector based on the transverse photoelectric effect, which has been widely used in the measurement of distance, displacement and angle. Limit detection power is an important parameter of position-sensitive detectors. Due to the low responsivity of existing Si-based position-sensitive detectors, the detected light intensity is usually at the microwatt level, which severely limits its application range. For example, in laser guidance, the minimum detection power Pmin of the position sensitive detection component of the core component directly determines the working distance. Si-based position-sensitive detectors usually need to add a relatively large bias voltage to ensure their detection performance. In addition, since t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/028H01L31/109H01L31/18
CPCH01L31/028H01L31/109H01L31/1804Y02P70/50
Inventor 倪振华王文辉梁铮丁荣
Owner 泰州巨纳新能源有限公司