Piezoresistive compound sensor suitable for surface mounting technology and manufacturing method thereof

A composite sensor and pressure sensor technology, applied in the field of sensors, can solve problems affecting device performance, increasing the difficulty and cost of device manufacturing, etc.

Active Publication Date: 2017-10-20
GUANGDONG HEWEI INTEGRATED CIRCUIT TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The formation of electrical connection channels through TSV technology, as mentioned in the analysis of Do...

Method used

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  • Piezoresistive compound sensor suitable for surface mounting technology and manufacturing method thereof
  • Piezoresistive compound sensor suitable for surface mounting technology and manufacturing method thereof
  • Piezoresistive compound sensor suitable for surface mounting technology and manufacturing method thereof

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Embodiment Construction

[0171] The embodiment of the present invention is based on a silicon (Cayity-SOI) wafer on an insulating substrate with a pre-set cavity. In the first and second embodiments, the wafer structure is as follows Figure 7 shown. The wafer includes a substrate silicon 200 , an insulating layer 300 (silicon dioxide), a first pre-cavity 400 , a second pre-cavity 500 , and a top layer of silicon 600 . The doping concentration and crystal orientation of the top-layer silicon 600 and the substrate silicon 200 can be freely selected according to actual needs, but the doping methods of the top-layer silicon 600 and the substrate silicon 200 must be opposite. Only one typical application is listed here: both the top silicon 600 and the substrate silicon 200 adopt (100) crystal orientation, the top silicon 600 is N-type doped, and the substrate silicon 200 is P-type doped (of course, the top silicon 600 is P-type doping, and substrate silicon 200 is N-type doping). The position, depth an...

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Abstract

The invention relates to a piezoresistive compound sensor suitable for a surface mounting technology and a manufacturing method thereof. The piezoresistive compound sensor comprises a planar integrated or vertical integrated structure; a used wafer structure comprises a substrate layer, a top layer, an insulating layer in the wafer and cavities arranged at interface positions in the substrate layer and the insulating layer, wherein the top layer and the substrate layer are doped in a reversal phase manner; an electric isolation groove is arranged on the substrate layer; metal pins are formed on the substrate layer surrounded by the electric isolation groove; a piezoresistive strip of the compound sensor, an electrical lead wire area and an electric connection channel are formed on the top layer, and the electric connection channel is arranged in the overlapped area of the electrical lead wire area and substrate silicon ; releasing grooves are arranged on the insulating layer on the surface of the top layer, top layer silicon and the insulating layer in the wafer to form a movable structure of the compound sensor, and a protective cover plate is linked to form a sealed cavity The piezoresistive compound sensor provided by the invention is convenient for subsequently achieving three-dimensional packaging with a corresponding control circuit (IC), and is low in cost.

Description

technical field [0001] The invention relates to the technical field of sensors, in particular to a piezoresistive composite sensor suitable for surface mount technology and a manufacturing method thereof. Background technique [0002] Composite sensors refer to sensor devices that simultaneously sense different physical quantities. MEMS piezoresistive composite sensors composed of piezoresistive pressure sensors and piezoresistive acceleration sensors are widely used in automobile tire pressure monitoring due to their small size, light weight and low cost. There are a wide range of applications. . [0003] At present, MEMS composite sensors need to be used together with corresponding control ICs to achieve specific functions. The MEMS composite sensor and the corresponding control IC are packaged in a package module, and the industry generally uses wire bonding or flip-chip welding to realize the electrical connection between the sensor and the corresponding control IC. C...

Claims

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Application Information

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IPC IPC(8): B81B3/00B81B7/00B81C1/00
CPCB81B3/0032B81B7/0032B81B7/0058B81B2201/0264B81B2201/0292B81C1/00269B81C1/00325B81C1/0038B81C2201/0174B81C2203/01B81C2203/0163
Inventor 朱二辉周志健于洋陈磊杨力建邝国华
Owner GUANGDONG HEWEI INTEGRATED CIRCUIT TECH
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