High temperature characteristic test method and device for semiconductor device heated by current

Abstract

The invention relates to a high temperature characteristic test method and a device for a semiconductor device heated by current. When the circuit formed when a power supply and a to-be-tested semiconductor device are electrically connected is conducted, conduction current exists in the to-be-tested semiconductor device, loss of the semiconductor device itself can be used to heat a semiconductor chip, and the heating speed is quick; during the heating process, a TSP parameter of the semiconductor device is monitored timely, the TSP parameter is used to calculate the junction temperature of the to-be-tested semiconductor device, once the junction temperature is enough close to the test target temperature Tj-test, the high temperature characteristic test system is used to realize a high temperature characteristic test on the to-be-tested semiconductor device. The time consumed for test is little, the efficiency is high, and the method and the device are extremely suitable for test on a large number of samples; the test precision is high; and no scalding possibility exists during the operation process, and the test safety is improved.

Description

technical field [0001] The invention relates to a testing method and device, in particular to a high-temperature characteristic testing method and device for heating a semiconductor device by electric current, belonging to the technical field of semiconductor high-temperature characteristic testing. Background technique [0002] Semiconductor devices based on semiconductor materials such as silicon, germanium or gallium arsenide can be used as rectifiers, oscillators, light emitters, amplifiers, photometers and other equipment. To distinguish them from integrated circuits, they are sometimes called discrete devices. Specifically include diodes, bipolar transistors, field effect transistors, photodetectors, light emitting diodes, semiconductor lasers and photocells and other devices. [0003] The characteristics of the parameters and performance of semiconductor devices under different temperature conditions. Specifically, it includes normal temperature (25°C) characteristi...

AI Technical Summary

Problems solved by technology

[0013] 1), the test takes too long, the efficiency is low, and it is only suitable for the test of a small number of samples

[0014] 2), the test accuracy is not high

If higher precision is required, the cost of the heating device will increase significantly

[0015] 3) There is a certain risk in the experiment

Because of the high temperature generated during the experiment, burns may occur during the operation

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