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Method for forming magnetic tunnel junction through patterning quad-layer mask

A magnetic tunnel junction and mask pattern technology, applied in the manufacture/processing of electromagnetic devices, etc., can solve the problems of unclear outline masks, affecting MTJ patterns, and difficulty in forming clear and sharp side walls, so as to eliminate consumption and improve Effect of patterns and contours, reducing the risk of short circuits

Active Publication Date: 2017-11-07
SHANGHAI CIYU INFORMATION TECH
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Problems solved by technology

Therefore, it is difficult for tantalum (Ta) film masks to form clear and sharp sidewalls, resulting in an ill-defined mask that affects the underlying MTJ pattern

Method used

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  • Method for forming magnetic tunnel junction through patterning quad-layer mask
  • Method for forming magnetic tunnel junction through patterning quad-layer mask
  • Method for forming magnetic tunnel junction through patterning quad-layer mask

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Embodiment Construction

[0051] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be noted that the drawings of the present invention all adopt a simplified form and all use imprecise proportions, which are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention.

[0052] A four-layer mask patterning method for MTJ, including but not limited to the preparation of magnetic random access memory (MRAM), nor any process sequence or flow, as long as the prepared product or device is prepared with the following preferred process sequence or flow Same or similar. The method includes:

[0053] Step 1: Form MTJ film layer unit on the substrate;

[0054] Step two, forming a QLM film unit on the MTJ film unit;

[0055] Step 3: Form a photoresist (...

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Abstract

The invention provides a method for forming a magnetic tunnel junction through patterning a quad-layer mask. The method comprises the following steps of 1, forming a magnetic tunnel junction film layer unit on a substrate; 2, forming a quad-layer mask film layer unit on the magnetic tunnel junction film layer unit; 3, forming a photoresist unit on the quad-layer mask film layer unit; 4, patterning the photoresist unit through lithography; 5, patterning the quad-layer mask film layer unit; 6, patterning the magnetic tunnel junction film layer unit; 7, trimming the side wall of the damaged patterned magnetic tunnel junction film layer unit by means of ion beam etching; and 8, coating the patterned magnetic tunnel junction film layer unit by means of a silicon nitride layer. The method has advantages of effectively improving a pattern and a contour after tantalum mask etching, eliminating consumption of tantalum mask before magnetic tunnel junction etching, and reducing shortcircuit risk of a magnetic random memory circuit bit wire and a magnetic tunnel junction unit.

Description

Technical field [0001] The invention relates to a method for manufacturing a magnetic tunnel junction (MTJ, Magnetic Tunnel Junction), in particular to a method for patterning with a quad-layer mask (QLM, Quad-layer Mask) under 193nm or more ultra-fine lithography technology conditions The method of forming a magnetic tunnel junction belongs to the technical field of magnetic radom access memory (MRAM) manufacturing. Background technique [0002] In recent years, MRAM using the magnetoresistance effect of MTJ is considered to be the future solid-state nonvolatile memory, which has the characteristics of high-speed reading and writing, large capacity and low energy consumption. Ferromagnetic MTJ is usually a sandwich structure, which has a magnetic memory layer, which can change the magnetization direction to record different data; an insulating tunnel barrier layer located in the middle; a magnetic reference layer, located on the other side of the tunnel barrier layer, it The di...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/12H10N50/01
CPCH10N50/01
Inventor 张云森肖荣福
Owner SHANGHAI CIYU INFORMATION TECH
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