Photoresist patterning method, preparation method of semiconductor structure, and semiconductor equipment

Abstract

The invention provides a photoresist patterning method, a preparation method of a semiconductor structure, and semiconductor equipment. The photoresist patterning method comprises the following steps: 1) providing a wafer substrate, wherein the surface of the wafer substrate comprises a plurality of chip areas and marginal areas positioned at the peripheries of the chip areas; 2) forming a photoresist layer on the upper surface of the wafer substrate, wherein the photoresist layer comprises first parts positioned on the chip areas of the wafer substrate and second parts positioned on the marginal areas of the wafer substrate; 3) forming annular barrier layers on the upper surfaces of the second parts of the photoresist layer; 4) performing full-wafer exposure so as to pattern the first parts of the photoresist layer. By the photoresist patterning method, the photoresist layer positioned on the marginal areas of the wafer substrate is avoided from being patterned, and in the follow-up process, defects in the marginal areas of the wafer substrate can be effectively avoided.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, and in particular relates to a photoresist patterning method, a method for preparing a semiconductor structure and semiconductor equipment. Background technique [0002] With the development of semiconductor technology, the size of semiconductor devices and their parts is getting smaller and smaller. When preparing some device structures with smaller dimensions, the existing photolithography process can no longer meet the requirements. For example, when forming trenches in a wafer substrate, the existing process is generally as follows: firstly, a hard mask layer is formed on the upper surface of the wafer substrate; secondly, a light mask is formed on the upper surface of the hard mask layer. A resist layer, and patterning the photoresist layer by using a photolithography process; then, etching the hard mask layer according to the patterned photoresist layer to pattern the h...

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Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the object of the present invention is to provide a photoresist patterning method, a method for preparing a semiconductor structure and a semiconductor device, which are used to solve the problem in the prior art that the edge region of the wafer substrate is The non-flat surface leads to the problem that defects are easily caused in the edge region of the wafer substrate after the photolithography process, and the process of avoiding defects in the edge region of the wafer substrate is easy to cause damage to the wafer substrate and Low production efficiency and other issues

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