Production method of thin film transistor

Abstract

The invention provides a production method of a thin film transistor. The method comprises the following steps of sequentially depositing a semiconductor layer and a metal layer; coating a photoresist layer on the metal layer; exposing the photoresist layer, patterning the photoresist layer, wherein one part of the photoresist layer is formed into a thin photoresist layer, and the other part is formed into the thick photoresist layer or non-photoresist layer; etching primarily: etching the metal layer and the semiconductor layer to remove the part covered by the non-photoresist layer; graying the photoresist layer, and removing the thin photoresist layer to expose the metal layer positioned under the thin photoresist layer; etching secondarily: etching the metal layer to form a source, a drain and a channel area and expose the semiconductor layer positioned in the channel area; and removing the photoresist layer. According to the production method provided by the invention, one time of utilization of a photomask is reduced, production cost of the thin film transistor is reduced, and a technological process is optimized.

Description

technical field [0001] The invention belongs to the technical field of thin film transistors, and in particular relates to a manufacturing method of thin film transistors. Background technique [0002] Among flat panel display devices, Thin Film Transistor Liquid Crystal Display (TFT-LCD for short) has the characteristics of small size, low power consumption, relatively low manufacturing cost and low radiation. [0003] In order to form a TFT (Thin Film Transistor, thin film transistor) array on a transparent substrate, in the TFT array production process, it is necessary to use a certain number of photomasks (Photo Mask) to repeatedly perform film formation, exposure, and etching on the substrate. and other photolithography processes to form the leads, electrodes, terminals, and insulating film layers of the TFT array. Since the mass production of TFT-LCD began in 1993, in order to reduce production costs and improve product yield, various manufacturers have continuously c...

AI Technical Summary

Problems solved by technology

Therefore, the process parameters and process conditions of IGZO TFT will not be exactly the same as those of amorphous silicon TFT. That is to say, the TFT process of IGZO process must have its own set of processes, and the process of amorphous silicon TFT cannot be completely copied.

Images