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Heterostructure LED device with enhanced hole injection

A technology for LED devices and heterostructures, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of increased device operating voltage, harsh epitaxial growth conditions, and complex preparation processes, and achieves increased device operating voltage and improved space. Hole concentration and hole drift rate, the effect of mitigating activation energy

Active Publication Date: 2017-11-24
GUANGDONG INST OF SEMICON IND TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These electron blocking layers alleviate the sudden drop in efficiency to a certain extent, but there are still a series of problems such as increased device operating voltage due to large thickness, harsh epitaxial growth conditions, or complicated preparation processes.

Method used

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  • Heterostructure LED device with enhanced hole injection
  • Heterostructure LED device with enhanced hole injection

Examples

Experimental program
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Effect test

Embodiment 1

[0018]In this embodiment, the LED device is a blue LED device with a formal structure, and its structure is as follows: figure 1 shown. At this time, the substrate 1 is a patterned sapphire growth substrate, on which a GaN buffer layer, a GaN unintentionally doped layer, an n-type GaN electron Drift layer, 10 cycles of In 0.2 Ga 0.8 N / GaN multi-quantum well light-emitting active region (light-emitting wavelength is about 460nm), p-type electron blocking layer, p-type GaN hole drift layer and p-type GaN contact layer. The conditions and parameters of epitaxial growth are similar to those of traditional high-power blue LEDs. The difference is that the p-type electron blocking layer is made of p-Al with a thickness of 5nm 0.14 Ga 0.86 N layer, p-In with a thickness of 1nm / 1nm / 1nm in sequence 0.08 Ga 0.92 N / p-In 0.04 Ga 0.96 N / p-In 0.14 Ga 0.86 N composite layer and p-Al with a thickness of 5nm 0.07 Ga 0.93 N layer composition. The Mg doping concentration is 3×10 19...

Embodiment 2

[0021] In this embodiment, the LED device is a near-ultraviolet LED device with a formal structure, and its structure is as follows: figure 1 shown. At this time, the substrate 1 is a sapphire / AlN composite growth substrate, on which a GaN buffer layer, a GaN unintentionally doped layer, an n-type Al 0.07 Ga 0.93 N electron drift layer, 10 cycles of In 0.08 Ga 0.92 N / GaN multi-quantum well light-emitting active region (light-emitting wavelength is about 395nm), p-type electron blocking layer, p-type Al 0.07 Ga 0.93 N hole drift layer and p-type In 0.07 Ga 0.93 N-contact layer. The conditions and parameters of epitaxial growth are similar to those of traditional near-ultraviolet LEDs. The difference is that the p-type electron blocking layer is made of p-Al with a thickness of 2nm 0.15 Ga 0.85 N layer, p-In with a thickness of 2nm / 2nm / 2nm 0.05 Ga 0.95 N / p-In 0.03 Ga 0.97 N / p-In 0.08 Ga 0.92 N composite layer and p-Al with a thickness of 5nm 0.14 Ga 0.86 N lay...

Embodiment 3

[0024] In this embodiment, the LED device is a near-ultraviolet LED device with a flip-chip structure, and its structure is as follows: figure 2 shown. At this time, the substrate 1 is a thermally conductive base. Its epitaxial structure is an AlN buffer layer, AlN buffer layer, Al 0.3 Ga 0.7 N unintentionally doped layer, n-type Al 0.1 Ga 0.9 N electron drift layer, 10 cycles of In 0.02 Ga 0.98 N / Al 0.1 Ga 0.9 N multi-quantum well light-emitting active region (light-emitting wavelength is about 365nm), p-type electron blocking layer, p-type Al 0.1 Ga 0.9 N hole drift layer and p-type In 0.02 Ga 0.98 N-contact layer. The conditions and parameters of epitaxial growth are similar to those of traditional near-ultraviolet LEDs. The difference is that the p-type electron blocking layer is made of p-Al with a thickness of 3nm 0.2 Ga 0.8 N layer, p-In with a thickness of 3nm / 3nm / 3nm 0.02 Ga 0.98 N / p-In 0.02 Ga 0.98 N / p-In 0.02 Ga 0.98 N composite layer and p-Al ...

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Abstract

The invention provides a heterostructure LED device with enhanced hole injection. The device comprises a substrate and an epitaxial structure on the substrate. The epitaxial structure comprises a buffer layer, an unintentional doped layer, an n type electron drift layer, a multi-quantum well light-emitting active area, a p type electron blocking layer, a p type hole drift layer and a p type contact layer orderly arranged along an epitaxial growth direction. The n type electron drift layer is provided with an n type ohmic contact electrode. The p type contact layer is provided with a p type ohmic contact electrode. The p type electron blocking layer is formed by a p-AlxGa1-XN layer, a P-Iny1Ga1-y1N / p-Iny2Ga1-y2N / p-Iny3Ga1-y3N composite layer and a p-AlzGa1-zN layer orderly arranged along the epitaxial growth direction. According to the heterostructure LED device, on the basis of ensuring a good blocking effect of electrons and not increasing the working voltage of the device, the hole concentration and the hole drift rate are effectively improved, adverse effects caused by large Mg acceptor activation energy and low hole mobility are alleviated, the hole injection is greatly enhanced, and thus the device light emitting efficiency is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor lighting, in particular to a heterostructure LED device that enhances hole injection. Background technique [0002] GaN-based light-emitting diodes (LEDs) have the advantages of small size, long life, high efficiency and energy saving, and environmental protection. They are ideal alternative light sources for traditional incandescent and fluorescent lamps, and are the core key devices leading the new generation of lighting revolution. In the past ten years, the scale of the LED lighting market has continued to expand and achieved great success. At the same time, new LED applications such as visible light communication, micro-display, and wearable smart glasses have continued to develop, which put forward higher requirements for device performance. At present, one of the important challenges still faced in academia and industry is how to solve the problem of LED luminous efficiency drop (Effi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/14H01L33/30H01L33/32
CPCH01L33/14H01L33/145H01L33/30H01L33/32
Inventor 刘宁炀陈志涛王巧王君君林丹赵维龚政
Owner GUANGDONG INST OF SEMICON IND TECH
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