Semiconductor device and unit and circuit structure thereof and unit, circuit system thereof

Abstract

The invention relates to a semiconductor device unit, a semiconductor device, a circuit structure unit, a circuit structure and a circuit system. The semiconductor device unit includes: a substrate; a first doped region of a first conduction type on the substrate; a second doped region of a second conduction type on the substrate; a third doped region of a second conduction type on the substrate; an isolation structure which is intended for isolating the first doped region from the second doped region and isolating the first doped region from the third doped region; a fourth doped region of the first conduction type below the third doped region on the substrate and a fifth doped region of the second conduction type below the third doped region on the substrate; a well of the second conduction type below the first, the second and the fifth doped regions; and n diodes which are in series connection to the second doped region, wherein n is an integer greater than or equal to 0.

Description

technical field [0001] The present invention relates to the technical field of semiconductor devices, circuits and integrated circuits, in particular to a semiconductor device unit, a semiconductor device, a circuit structure unit, a circuit structure and a circuit system. Background technique [0002] At present, in the advanced submicron Complementary Metal-Oxide-Semiconductor (CMOS) process, the System on Chip (SoC) integrated circuit has been designed as a module with multiple VDD and VSS power supplies, such as 3.3v interface circuit module, 2.5v analog circuit module, 2.5v digital circuit module, 1.2v CPU module, 5v display driver module, etc. The power lines VDD and VSS of these modules generally need to be isolated from each other to prevent noise from interfering with each other. [0003] However, interface circuits for input-output communication between multiple power modules are susceptible to electrostatic damage. Electrostatic pulses can be positive pulses or ...

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Problems solved by technology

[0004] An object of the present invention is to provide a semiconductor device unit, a semiconductor device for electrostatic protection, including such a semiconductor device unit and a circuit structure unit, a circuit structure and a circuit system of a semiconductor device, wherein the semiconductor device unit can replace the prior art The diode-based electrostatic protection unit in the present invention solves the problems of large capacitance and high power consumption of the diode-based electrostatic protection unit in the prior art

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