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Hall component and fabrication method thereof

A technology of Hall elements and doping elements, applied in the semiconductor field, can solve problems such as poor temperature drift characteristics, achieve low temperature drift, improve reliability, and simplify applications

Active Publication Date: 2017-12-08
SUZHOU JUZHEN PHOTOELECTRIC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of this, an embodiment of the present invention provides a Hall element and a preparation method thereof, so as to solve the problem of poor temperature drift characteristics in the application of the existing Hall element

Method used

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  • Hall component and fabrication method thereof

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Embodiment 1

[0027] This embodiment provides a Hall element, such as figure 1 As shown, it includes a stacked substrate layer 11, a semiconductor functional layer 12 and an electrode layer 13; the semiconductor functional layer 12 is N-type doped In x Ga 1-x As 1-2x P 2x layer, where the value of x is greater than 0 and not greater than 0.5. In x Ga 1-x As 1-2x P 2x The material is lattice matched to the gallium arsenide substrate. in x Ga 1-x As 1-2x P 2x N-type semiconductors are formed after doping with pentavalent elements. Since free electrons are mainly provided by impurity atoms, the more impurities are doped, the higher the concentration of many sons (free electrons), and the stronger the conductivity.

[0028] As an optional implementation, In x Ga 1-x As 1-2x P 2x The doped pentavalent element in the layer is at least one of tellurium (Te), selenium (Se), sulfur (S), silicon (Si), tin (Sn), germanium (Ge), and the doping concentration is 3 ×10 16 cm -3 to 3×10 ...

Embodiment 2

[0039] This embodiment provides a Hall element, the structure is the same as Embodiment 1, the difference is that the value of x is 0.5, that is, the semiconductor functional layer is In 0.5 Ga 0.5 P, the doping element is tellurium, and the doping concentration is 3×10 16 cm -3 , with a thickness of 0.5 μm.

Embodiment 3

[0041] This embodiment provides a Hall element, the structure is the same as that of Embodiment 1, the difference is that the value of x is 0.1, that is, the semiconductor functional layer is In 0.1 Ga 0.9 As 0.8 P 0.2 , the doping element is germanium, and the doping concentration is 8×10 16 cm -3 , with a thickness of 0.1 μm.

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Abstract

The invention belongs to the technical field of semiconductors, and provides a Hall component with low-temperature drift and a fabrication method thereof. The Hall component comprises a substrate layer 1, a semiconductor function layer 2 and an electrode layer 3 which are laminated, wherein the semiconductor function layer 2 is an N-type doping In<x>Ga<1-x>As<1-2x>P<2x> layer, and x is more than 0 but less than 0.5. The semiconductor function layer In<x>Ga<1-x>As<1-2x>P<2x> quaternary alloy and is high in temperature stability, and thus, the temperature coefficient performance of an output voltage of the Hall component is substantially improved; and in a Hall component application circuit, a temperature compensation circuit is not needed to be fabricated, the application of the Hall component is simplified, and the reliability of the whole machine is improved.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a Hall element and a preparation method thereof. Background technique [0002] The Hall element is a magnetic sensor based on the Hall effect. It is generally used in motors to measure the rotor speed, such as the magnetic drum of a video recorder, and the cooling fan in a computer. They can be used to detect magnetic fields and their changes, and can be used in various occasions related to magnetic fields. Hall elements have developed into a diverse family of magnetic sensor products and have been widely used. [0003] In the current applications of the Hall element, higher and higher requirements are put forward for the temperature characteristics of the Hall element. Among the current commercial Hall elements, the GaAs Hall element has the best temperature drift characteristics. However, in fields with high requirements such as current sensors, a temperature compensation circu...

Claims

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Application Information

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IPC IPC(8): H01L43/10H01L43/14
CPCH10N52/01H10N50/85
Inventor 胡双元朱忻黄勇颜建吴文俊和田修
Owner SUZHOU JUZHEN PHOTOELECTRIC