Method and device for eliminating drift influence of temperature on alpha-energy spectrum peak of Si-PIN detector

Abstract

The invention discloses a method and a device for eliminating a drift influence of temperature on an alpha-energy spectrum peak of an Si-PIN detector, and relates to the technical field of radon concentration measurement. The method for eliminating the drift influence of the temperature on the alpha-energy spectrum peak comprises the four steps: signal amplification, following of energy spectrum peaks, signal amplitude identification and determination of radon concentration. According to the method and the device disclosed by the invention, temperature measured by a temperature and humidity sensor is used as a reference evidence of actual temperature of the detector, through combination of amplitudes of the energy spectrum peaks output by a peak holding circuit and an ADC (Analog-to-Digital Converter) conversion circuit acquisition detector, the actual temperature of the detector is accurately judged, so that the following of the energy spectrum peaks and elimination of the drift influence of the temperature on the alpha-energy spectrum peak of the Si-PIN detector are realized, deviation of a measurement result caused by difference of the temperature measured by the detector and the temperature and humidity sensor is reduced to a maximum extent, the accuracy and the reliability of the measurement result are ensured, and a continuous monitoring requirement on a nuclear facility site can be met.

Description

technical field [0001] The invention relates to the technical field of radon concentration measurement, in particular to a method and a device for eliminating the influence of temperature on the drift of the α energy spectrum peak of a Si-PIN detector. Background technique [0002] Compared with other detectors, Si-PIN detector semiconductor detectors have the advantages of high energy resolution, fast time response, wide linear range, small size, and low operating voltage. The detector is a reverse-biased PN junction diode, which is equivalent to a solid ionization chamber. The working principle is similar to that of a gas ionization chamber, except that the gas in the gas detector is replaced by a semiconductor material. When charged particles enter the depletion region, electron-hole pairs are generated, which move to both sides under the action of the electric field in the sensitive region, and are collected by the electrode to form a pulse charge signal. The size of the...

AI Technical Summary

Problems solved by technology

However, during the measurement process of the instrument, before the temperature in the measurement room and the temperature of the detector are fully balanced, there will be a certain difference between the actual temperature of the detector and the temperature measured by the temperature and humidity sensor (the temperature and humidity sensor measures the temperature in the measurement room). , if the temperature value collected by the temperature and humidity sensor is directly used as the actual temperature of the detector, it will lead to deviations in the test results, so this method still needs to be improved

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