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A post-cleaning method and wafer for chemical mechanical planarization of tungsten

A chemical mechanical and flattening technology, which is applied in the direction of chemical instruments and methods, cleaning methods using liquids, cleaning methods and utensils, etc., can solve the post-cleaning process and equipment operation and safety management requirements, unfavorable surface particles and polishing fluid Solve problems such as residue discharge and limited cleaning effect, achieve the effect of reducing surface particle contamination, reducing the risk of re-contamination, and optimizing Zeta potential

Active Publication Date: 2019-07-12
BEIJING SEMICORE PRECISION MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In the related technology, the oxidation and electrochemical corrosion of the W plug (tungsten plug) are obvious during the post-CMP cleaning process, and the residual phenomenon of particles after cleaning and the risk of secondary contamination need to be reduced; the post-cleaning device used in the related technology, The cleaning effect is limited, it is not conducive to the drying effect, it is easy to cause watermark residue, and it is not conducive to the discharge of surface particles and polishing liquid residues in the cleaning process. If the drying tank process such as IPA is used, the post-cleaning process and equipment operation and safety management requirements are relatively high. high

Method used

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  • A post-cleaning method and wafer for chemical mechanical planarization of tungsten
  • A post-cleaning method and wafer for chemical mechanical planarization of tungsten

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0174] A post-cleaning method for chemical mechanical planarization of tungsten, comprising the steps of:

[0175] a. Wafer enters with N 2 The megasonic cleaning tank of the bubbling overflow circulation system is cleaned with a cleaning solution to initially remove particles and some metal impurities; the key process parameters are as follows:

[0176] Cleaning fluid: NH 4 OH and H 2 The mass ratio of O to NH 4 OH:H 2 O=1:5, the additive dosage is NH 4 OH and H 2 O 0.2% of the total mass;

[0177] Cleaning time: 5s;

[0178] Wafer speed: 35rpm;

[0179] Megasonic cleaning tank power: 50W;

[0180] The megasonic frequency of the megasonic cleaning tank: 0.8MHz;

[0181] N 2 Flow rate: 3000mL / min;

[0182] N 2 Number of tubes: 4;

[0183] N 2 Pipe diameter: 0.5mm;

[0184] b. The wafer obtained in step a is successively brushed with the first scrubbing liquid and the second scrubbing liquid in the first scrubbing tank; the electrochemical corrosion of tungsten ...

Embodiment 2

[0235] A post-cleaning method for chemical mechanical planarization of tungsten, comprising the steps of:

[0236] a. Wafer enters with N 2 The megasonic cleaning tank of the bubbling overflow circulation system is cleaned with a cleaning solution to initially remove particles and some metal impurities; the key process parameters are as follows:

[0237] Cleaning fluid: NH 4 OH and H 2 The mass ratio of O to NH 4 OH:H 2 O=1:20, the additive dosage is NH 4 OH and H 2 O 1% of the total mass;

[0238] Cleaning time: 25s;

[0239] Wafer speed: 10rpm;

[0240] Megasonic cleaning tank power: 150W;

[0241] The megasonic frequency of the megasonic cleaning tank: 1.2MHz;

[0242] N 2 Flow rate: 8000mL / min;

[0243] N 2 Number of tubes: 4;

[0244] N 2 Pipe diameter: 0.2mm;

[0245] b. The wafer obtained in step a is successively brushed with the first scrubbing liquid and the second scrubbing liquid in the first scrubbing tank; the electrochemical corrosion of tungsten...

Embodiment 3

[0296] A post-cleaning method for chemical mechanical planarization of tungsten, comprising the steps of:

[0297] a. Wafer enters with N 2 The megasonic cleaning tank of the bubbling overflow circulation system is cleaned with a cleaning solution to initially remove particles and some metal impurities; the key process parameters are as follows:

[0298] Cleaning fluid: NH 4 OH and H 2 The mass ratio of O to NH 4 OH:H 2 O=1:10, the additive dosage is NH 4 OH and H 2 O 0.5% of the total mass;

[0299] Cleaning time: 15s;

[0300] Wafer speed: 20rpm;

[0301] Megasonic cleaning tank power: 100W;

[0302] The megasonic frequency of the megasonic cleaning tank: 1MHz;

[0303] N 2 Flow: 5000mL / min;

[0304] N 2 Number of tubes: 4;

[0305] N 2 Pipe diameter: 0.2mm;

[0306] b. The wafer obtained in step a is successively brushed with the first scrubbing liquid and the second scrubbing liquid in the first scrubbing tank; the electrochemical corrosion of tungsten is s...

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Abstract

The present invention provides a post cleaning method for tungsten chemical mechanical planarization and a wafer. The post cleaning method process for tungsten chemical mechanical planarization in the present invention is simple, uses a specific stepwise operation of cleaning, scrubbing, washing and spin drying, and has a good cleaning effect, effectively reducing the oxidation and electrochemical corrosion to W plug during the CMP post cleaning process, avoiding more serious defects of dished W recess of the W plug, optimizing Zeta electric potential of the wafer surface, lowering the risk of re-contamination on the wafer after CMP. The present invention also provides a wafer obtained by the described post cleaning method for tungsten chemical mechanical planarization, the wafer having the advantage of leaving less residual particles on the surface, and having a lower amount of corrosion.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a post-cleaning method for chemical mechanical planarization of tungsten and a wafer. Background technique [0002] The chemical mechanical planarization of tungsten is a process of planarizing the metal tungsten filling the through hole, removing the excess deposited tungsten on the surface of the oxide layer, leaving the tungsten plug in the through hole to form a metal interconnection path. The basic goal of the W plug CMP post-cleaning process is to remove the particles brought in during the planarization process, mainly including the residual particles of the polishing solution, the abrasive debris of the polishing pad, and the particles generated during the planarization process of the wafer itself. [0003] After tungsten chemical mechanical planarization, the tungsten plug (Tungsten plug) will be exposed on the wafer surface. In the post-cleaning proce...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L23/538
CPCB08B3/08H01L21/02H01L23/538
Inventor 张康李婷孙铭泽
Owner BEIJING SEMICORE PRECISION MICROELECTRONICS EQUIP CO LTD