Check patentability & draft patents in minutes with Patsnap Eureka AI!

Method for preparing nanowire of stannous sulfide/silicon oxide core-shell structure

A technology of stannous sulfide and silicon oxide, which is applied in the field of core-shell structure nanowires, can solve the problems of complex process of stannous sulfide nanowires and unfavorable large-scale production, and achieve good application prospects, easy promotion and operation, and low environmental pollution small effect

Active Publication Date: 2018-01-09
GUANGDONG UNIV OF TECH
View PDF6 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The method for preparing stannous sulfide nanowires by the above techniques is complex and unfavorable for large-scale production
Sn2S / SiO core-shell nanowires have not been reported yet
However, the synthesis of tin sulfide / silicon oxide core-shell nanowires under normal pressure by chemical vapor deposition without catalyst assistance has not yet been reported.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing nanowire of stannous sulfide/silicon oxide core-shell structure
  • Method for preparing nanowire of stannous sulfide/silicon oxide core-shell structure
  • Method for preparing nanowire of stannous sulfide/silicon oxide core-shell structure

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0033] The invention provides a method for preparing a stannous sulfide / silicon oxide core-shell nanowire, comprising:

[0034] Put stannous sulfide powder in the central temperature zone of the high-temperature tube furnace, place silicon wafers downstream of the stannous sulfide powder airflow, vacuumize the high-temperature tube furnace cavity, and then pass in airflow to restore the high-temperature tube furnace cavity to normal Press and heat to obtain tin sulfide / silicon oxide core-shell nanowires.

[0035] The present invention has no special limitation on the source of the stannous sulfide powder, and the commercially obtained stannous sulfide block can be ground by a grinding method well known to those skilled in the art to obtain the stannous sulfide powder.

[0036] In the present invention, the purity of the stannous sulfide (powder) is preferably above 99.0%, more preferably above 99.5%, most preferably 99.01%, 99.1%, 99.5%, 99.9%, 99.99%, 99.995%, 99.998% %, 99....

Embodiment 1

[0048] Clean the silicon wafer;

[0049] Commercially purchased block-shaped stannous sulfide is fully ground into powder, weighs 0.25g of stannous sulfide powder with a purity of 99.5%, puts it into a ceramic boat, puts the ceramic boat into the central temperature zone of a high-temperature tube furnace, and Place the above-mentioned cleaned silicon wafers at the downstream of the airflow at 17 cm from the central temperature zone (the positions of the airflow, the central temperature zone and the silicon wafers are as follows: Figure 5 shown); the high-temperature tube furnace is vacuumized, and then 60 sccm of Ar gas flow is introduced into the furnace to restore the tube furnace to normal pressure, and the tube furnace is heated to 900 ° C for 3 hours, then naturally cooled, and the A tin sulfide / silicon oxide core-shell structure nanowire is obtained on the surface of the silicon chip.

[0050] Carry out XRD diffraction experiment to the stannous sulfide / silicon oxide ...

Embodiment 2

[0055] Clean the silicon wafer;

[0056] Commercially purchased block-shaped stannous sulfide is fully ground into powder, weighs 0.2g of stannous sulfide powder with a purity of 99.8%, puts it into a ceramic boat, and puts the ceramic boat into the central temperature zone of a high-temperature tube furnace. Place the above-mentioned cleaned silicon wafers (the positions of the airflow, the central temperature zone and the silicon wafers such as Figure 5 shown); the high-temperature tube furnace is vacuumized, and then 70 sccm of Ar gas flow is introduced into the furnace to return the tube furnace to normal pressure, and the tube furnace is heated to 950 ° C for 2 hours, and then naturally cooled. A tin sulfide / silicon oxide core-shell structure nanowire is obtained on the surface of the silicon chip.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
thicknessaaaaaaaaaa
energy conversion efficiencyaaaaaaaaaa
Login to View More

Abstract

The invention provides a nanowire of a stannous sulfide / silicon oxide core-shell structure. The nanowire includes a stannous sulfide core and a silicon oxide shell wrapping the stannous sulfide core.The invention further provides a preparation method of the nanowire of the stannous sulfide / silicon oxide core-shell structure. The preparation method includes the steps of putting stannous sulfide powder into a central temperature area of a tubular high-temperature oven, placing silicon sheets in a downstream airflow area, vacuumizing a cavity of the tubular high-temperature oven, conducting heating after airflow is introduced into the cavity of the tubular high-temperature oven till the pressure inside the cavity turns to the atmospheric pressure, and obtaining the nanowire of the stannous sulfide / silicon oxide core-shell structure. The interior of the prepared nanowire of the stannous sulfide / silicon oxide core-shell structure is stannous sulfide, and the exterior of the prepared nanowire of the stannous sulfide / silicon oxide core-shell structure is silicon oxide. According to the method, the nanowire of the stannous sulfide / silicon oxide core-shell structure is prepared without adopting catalysts and templates under the atmospheric pressure; moreover, the method is simple in process, small in environmental pollution and easy to popularize and operate and has a great applicationprospect.

Description

technical field [0001] The invention relates to the technical field of core-shell structure nanowires, in particular to a tin sulfide / silicon oxide core-shell structure nanowire and a preparation method thereof. Background technique [0002] Tin sulfide (SnS) is a compound semiconductor material with group IV-VI layered structure, and it is an orthorhombic crystal system at room temperature. The structure of stannous sulfide Sn atoms and S atoms in each Sn-S diatomic layer are combined by strong covalent bonds, and the layers are combined by van der Waals force. The optical direct bandgap and indirect bandgap widths of tin sulfide are 1.2-1.5eV and 1.0-1.1eV, respectively, which have a good spectral match with solar radiation and have a large optical absorption coefficient (α>10 4 cm -1 ), theoretically its energy conversion efficiency can reach up to 25%, its constituent elements are abundant on the earth, and have good environmental compatibility. [0003] Most of th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B82B1/00B82B3/00B01J13/20B82Y30/00B82Y40/00
Inventor 简基康刘骄吴晶杜炳生蔡文阳苏灿锋
Owner GUANGDONG UNIV OF TECH
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com