Ultra wide band low noise amplifier with active negative feedback structure

A low-noise amplifier and ultra-broadband technology, applied in amplifiers with semiconductor devices/discharge tubes, DC-coupled DC amplifiers, amplifiers, etc., can solve problems such as high noise figure and narrow bandwidth, and achieve low noise figure and excellent Performance, Effects of Improved Linearity and Power Performance

Inactive Publication Date: 2018-01-12
UNIV OF SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to provide an ultra-wideband low-noise amplifier with an active negative feedback structure, which solves the problems of narrow bandwidth and high noise figure of existing low-noise amplifiers, and has higher gain and good linearity

Method used

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  • Ultra wide band low noise amplifier with active negative feedback structure
  • Ultra wide band low noise amplifier with active negative feedback structure
  • Ultra wide band low noise amplifier with active negative feedback structure

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Embodiment Construction

[0017] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0018] The invention provides an ultra-wideband low-noise amplifier with an active negative feedback structure, which is composed of an input amplification module 1, an active negative feedback module 2 and an output amplification module 3. The input amplifier module 1 is connected to the differential input signal V by the gate terminals of the first NMOS amplifier tube NM1 and the second NMOS amplifier tube NM2 in +, V in-, the source terminal is...

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Abstract

The invention discloses an ultra wide band low noise amplifier with an active negative feedback structure, solves the problem that an existing low noise amplifier is relatively narrow in bandwidth andrelatively high in noise coefficient and has relatively high gain and good linearity. The low noise amplifier comprises an input amplifier module (1), an active negative feedback module (2) and an output amplifier module (3). According to the ultra wide band low noise amplifier, active negative feedback is introduced; an active inductor is formed through utilization of a source level follower; the bandwidth of a circuit is expanded by compensating high frequency band gain; the structure also has a noise cancellation effect; and a noise coefficient of the circuit is optimized. The linearity ofthe circuit is optimized by distributing a static current through the input amplifier module and the output amplifier module. The source level negative feedback is also introduced into an output endof the designed low noise amplifier, and the bandwidth of the circuit is further expanded. The ultra wide band low noise amplifier is simple in structure, easy to integrate and small in occupied area.

Description

technical field [0001] The invention relates to an ultra-wideband low-noise amplifier with an active negative feedback structure, which has the characteristics of ultra-wideband, ultra-low noise and high linearity, and belongs to the technical field of radio frequency integrated circuits. Background technique [0002] With the advent of the 5G era, wireless communication technology has begun to develop in the direction of ultra-high speed, ultra-wideband, and ultra-large capacity, which puts higher requirements on the broadband performance of RF receivers. The low-noise amplifier is an important module of the RF receiving front end, which is used to amplify the signal received by the antenna at the first level, and plays a key role in the overall noise performance of the RF receiver and the subsequent processing of the signal. The main performance indicators of the low-noise amplifier Including gain, noise figure and linearity etc. Due to the high bandwidth requirements of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/02H03F1/32H03F1/48H03F3/193H03F3/21H03F3/45
Inventor 张昊闫旭蒋姝洁林福江
Owner UNIV OF SCI & TECH OF CHINA
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