Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor memory device and clock adjustment method thereof

A memory and semiconductor technology, applied in static memory, digital memory information, information storage, etc., can solve problems such as insufficient configuration

Active Publication Date: 2020-07-03
WINBOND ELECTRONICS CORP
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, limited by the layout, it is impossible to arrange enough signal lines in the semiconductor memory device to independently adjust the clock of each input / output circuit

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor memory device and clock adjustment method thereof
  • Semiconductor memory device and clock adjustment method thereof
  • Semiconductor memory device and clock adjustment method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0047] What is described in this chapter is the best way to implement the present invention. The purpose is to illustrate the spirit of the present invention rather than to limit the protection scope of the present invention. The protection scope of the present invention should be determined by the claims.

[0048] figure 2 is a block diagram of a semiconductor memory device 200 according to an embodiment of the present invention. The semiconductor memory device 200 can be a dynamic random access memory (Dynamic Random Access Memory, DRAM). Such as figure 2 As shown, the semiconductor memory device 200 includes a plurality of input / output circuits 210-1...210-N, multiple sets of data lines 220-1...220-N, a test mode setting circuit 230, an input clock adjustment trigger line 240 , an output clock adjustment trigger line 250 , and a memory array 260 . Note that in figure 2 The block diagram in the figure is only for the convenience of illustrating the embodiment of the p...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a semiconductor memory apparatus and a clock pulse adjusting method. The semiconductor memory apparatus comprises several input / output circuits, several data lines, a test modesetting circuit. several data lines are coupled to a memory array and several input / output circuits, several data lines are divided into multiple groups, and each input / output circuit is respectivelycorresponded to a set of the data line. The test mode setting circuit is coupled to several data lines, an external instruction is received, then the external instruction is transmitted to a latch circuit of each input / output circuit, and an input clock pulse or an output clock pulse of each input / output circuit can be simultaneously and independently adjusted.

Description

technical field [0001] The description of the present invention is mainly related to a clock adjustment technology of a semiconductor memory device, especially related to transmitting different clock adjustment settings corresponding to each input / output circuit in a semiconductor memory device through a data line or a controller to simultaneously Clock adjustment technology that independently adjusts the clock of each I / O circuit. Background technique [0002] The semiconductor memory is an integrated circuit (Integrated Circuit, IC) made of a silicon (Si) chip. Semiconductor memory devices are mainly classified into two types, volatile memory devices and nonvolatile memory devices. A volatile memory device is a memory device that loses stored data when power is interrupted. Volatile memory devices include, for example, Static Random Access Memory (SRAM), Dynamic Random Access Memory (Dynamic Random Access Memory, DRAM), and Synchronous Dynamic Random Access Memory (Synch...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G11C7/10G11C11/4093
Inventor 张昆辉
Owner WINBOND ELECTRONICS CORP