Method for forming semiconductor device
A semiconductor and device technology, applied in the field of semiconductor device formation, can solve problems such as poor electrical performance
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[0032] According to the background art, the electrical performance of semiconductor devices formed in the prior art is relatively poor.
[0033] It is found through research that due to the different operating voltages of the core device and the input-output device, the thickness of the gate dielectric layer of the core device and the input-output device is different. The gate dielectric layer includes an oxide layer and a high-k gate dielectric layer on the surface of the oxide layer. The thickness of the oxide layer in the core device is smaller than the thickness of the oxide layer in the input-output device, so that the thickness of the gate dielectric layer of the core device and the input-output device is different. Usually, the thicker peripheral oxide layer of the input and output devices is formed first, and then the thinner core oxide layer of the core device is formed.
[0034] The process steps of forming the peripheral oxide layer and the core oxide layer include:...
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