Photodetector with 3D dendritic structure and making method thereof

A technology for photodetectors and manufacturing methods, applied in the field of photodetectors, to achieve the effects of broadening application fields, improving performance, and high lattice matching

Active Publication Date: 2018-01-16
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In order to solve the problems shown by ZnO-based ultraviolet detectors, the purpose of the present invention is to provide a photodetector with a 3D dendritic structure and a manufacturing method thereof, so as to improve the performance and application range of the photodetector

Method used

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  • Photodetector with 3D dendritic structure and making method thereof
  • Photodetector with 3D dendritic structure and making method thereof
  • Photodetector with 3D dendritic structure and making method thereof

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Embodiment

[0039] 1) Take 0.1mol of high-purity (99.99wt%) SiO 2 Mix with the powder of C in a quartz boat, and then put the mixed powder into a high-temperature tube furnace, heat to 1400°C and keep the temperature constant for 30 minutes. During the heating process, Ar gas with a flow rate of 100 ml / min was continuously introduced. At high temperature, the carbonization of silicon vapor will produce a large number of 3C-SiC nanowires with a diameter of about 200 nm and a length of about tens of microns.

[0040]2) Put the 3C-SiC nanowires into the reaction chamber of the magnetron sputtering deposition equipment, select the ZnO ceramic target as the target material, adjust the sputtering power to 80W, the sputtering time to 10min, and the Ar gas flow to 8sccm. A ZnO seed layer with a thickness of 50 nm is evenly sputtered on the surface of the synthesized 3C-SiC nanowire by the method of magnetron sputtering.

[0041] 3) Put 25mM zinc nitrate hexahydrate and hexamethylenetetramine cr...

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Abstract

The invention relates to a photodetector with a 3D dendritic structure and a making method thereof, which belong to the field of photodetectors. The photodetector comprises a Si substrate, an insulated SiO2 layer, a 3C-SiC / ZnO 3D dendritic structure heterojunction material and metal electrodes sequentially from bottom to top. Firstly, a carbothermal reduction method is used to prepare a 3C-SiC nanowire trunk; then, a deposition method is adopted to deposit a ZnO seed layer on the surface of the 3C-SiC nanowires; a hydrothermal method is then used to grow ZnO nanowire branches on the ZnO seed layer, and the 3C-SiC / ZnO 3D dendritic structure heterojunction material is formed; and finally, the single 3C-SiC / ZnO 3D dendritic structure heterojunction material is transferred to a SiO2 / Si substrate, photoetching and a stripping technology are used to plate the metal electrodes at both ends of the heterojunction material, and thus, the photodetector is obtained. The photodetector has a largerabsorption area, a larger light absorption range, a more effective photocarrier separation rate, higher photocurrent gains and a faster light response speed.

Description

technical field [0001] The invention relates to a photodetector with a three-dimensional (3D) dendritic structure and a manufacturing method thereof, belonging to the field of photodetectors. Background technique [0002] Photodetectors play an important role in the fields of light wave communication, imaging technology, optoelectronic circuits, future optical storage, space exploration, environmental monitoring, biology and medical treatment. One-dimensional (1D) semiconductor nanowire structures are considered to be important building blocks for building future high-performance nanodevices due to their perfect crystallinity, large specific surface area, and high carrier mobility. However, due to the limited light absorption and photoelectric conversion efficiency of single-component 1D semiconductor nanowires, it is difficult to obtain a wide spectral response of nanowire-based photodetectors, which greatly limits their applications in photoelectric switching, optical stor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0352H01L31/18
CPCY02P70/50
Inventor 姜辛张兴来刘鲁生刘宝丹
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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