A High Performance Reference Voltage Source

Abstract

The invention discloses a high-performance reference voltage source and an implementation method thereof. The high-performance reference voltage source comprises a proportional to absolute temperature(PTAT) current generating circuit, a biasing circuit, a mirror current source, a current-voltage conversion circuit and a complementary to absolute temperature (CTAT) voltage generating circuit, wherein the PTAT current generating circuit is used for generating a PTAT current I0; the biasing circuit is used for stabilizing the grid voltage of every PMOS (p-channel metal oxide semiconductor) within a design value; the mirror current source is used for supplying the current I0 to the PTAT current generating circuit and outputting the current to the current-voltage conversion circuit; the current-voltage conversion circuit is used for converting the PTAT current I0 into a PTAT voltage; the CTAT voltage generating circuit is used for generating and outputting a CTAT voltage from the base-emitter voltage of the audion of the PTAT current generating circuit to raise the reference of the PTAT voltage and accordingly to acquire a reference voltage, which is the sum of the PTAT voltage and theCTAT voltage, from the upper end of the current-voltage conversion circuit.

Description

technical field [0001] The invention relates to a reference voltage source, in particular to a high-performance reference voltage source. Background technique [0002] The reference voltage source is one of the important modules in the analog integrated circuit. It is widely used in circuits such as power management chips, digital-to-analog converters, and phase-locked loops to provide stable reference voltages for circuits. An ideal voltage reference is a quantity independent of supply voltage, process, and temperature. With the development of integrated circuit technology and the development of portable electronic equipment, the design of low power consumption and low voltage of circuits has been paid more and more attention. In this context, the reference voltage source with low power consumption, low voltage, high output accuracy and small area has become a research hotspot today. [0003] Traditional bandgap references are generally based on the base-emitter voltage o...

AI Technical Summary

Problems solved by technology

[0003] Traditional bandgap references are generally based on the base-emitter voltage of a CMOS BJT device (V be ), this type of reference circuit has good temperature characteristics and process consistency, but it has excessive power consumption (the circuit operating current is tens of microamperes or even hundreds of microamperes), and the operating voltage is high (usually greater than 1.5V) problems, cannot meet the requirements of modern integrated circuit systems

So people began to study the reference circuit based on the threshold voltage of the MOS transistor. This type of reference circuit has the ability to work at a lower voltage (usually the operating voltage is less than 1V) and low power consumption (the circuit operating current is less than 1 microampere), but there are The problem that the output voltage varies greatly with the process

Images