Positive electrode processing method of crimping type IGBT/FRD chip

A front electrode and processing method technology, applied in the direction of circuits, electrical components, electrical solid devices, etc., can solve problems such as implementation difficulties, and achieve the effect of increasing adhesion

Pending Publication Date: 2018-01-30
GLOBAL ENERGY INTERCONNECTION RES INST CO LTD +2
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the indirect method reduces the photolithography and etching process once compared with the direct method, and shortens the processing cycle and cost, it needs to modify the existing equipment, which is difficult to implement

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Positive electrode processing method of crimping type IGBT/FRD chip
  • Positive electrode processing method of crimping type IGBT/FRD chip

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0042] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0043] A method for processing a front electrode of a press-bonded IGBT / FRD chip provided by an embodiment of the present invention will be described below with reference to the accompanying drawings.

[0044] figure 1 It is a schematic diagram of the implementation flow of a front electrode processing method of a crimped IGBT / FRD...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides a method for processing a front electrode of a press-connected IGBT/FRD chip, comprising forming a first thin film layer by chemical vapor deposition above a first metal layer and etching the first thin film layer to form a first window; The first metal layer exposed at the first window is subjected to reverse sputter etching; the second metal layer is grown on the surface of the combined structure formed by the first metal layer and the first thin film layer by sputtering, and the second metal layer is subjected to sputtering. Etching: coating the second thin film layer on the surface of the combined structure formed by the first thin film layer and the second metal layer, and etching the second thin film layer to form a second window for welding. Compared with the prior art, the present invention provides a method for processing the front electrode of the crimping type IGBT/FRD chip, which does not need to improve the existing equipment and is easy to operate.

Description

technical field [0001] The invention relates to the technical field of power electronic power devices, in particular to a method for processing a front electrode of a crimping type IGBT / FRD chip. Background technique [0002] The fully controlled power electronic device IGBT (Insulated Gate Bipolar Transistor) is widely used in the field of high-power high-voltage equipment due to its superior gate control function, low on-state loss and simple drive circuit. The fully controlled power electronic device IGBT mainly includes crimping IGBT and soldering IGBT from the packaging form, and the crimping IGBT has the following advantages compared with the soldering IGBT: [0003] ①: The internal leads are contacted and connected by crimping, which eliminates most of the welding points, which can effectively reduce the failure rate of welding points cracking due to power cycle and thermal cycle; [0004] ②: It can realize double-sided heat dissipation, so the heat dissipation effic...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/285H01L23/48
CPCH01L2224/05
Inventor 高明超王耀华刘江赵哿金锐温家良潘艳
Owner GLOBAL ENERGY INTERCONNECTION RES INST CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap