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Positive electrode processing method of crimping type IGBT/FRD chip

A front electrode and processing method technology, applied in the direction of circuits, electrical components, electrical solid devices, etc., can solve problems such as implementation difficulties, and achieve the effect of increasing adhesion

Pending Publication Date: 2018-01-30
GLOBAL ENERGY INTERCONNECTION RES INST CO LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although the indirect method reduces the photolithography and etching process once compared with the direct method, and shortens the processing cycle and cost, it needs to modify the existing equipment, which is difficult to implement

Method used

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  • Positive electrode processing method of crimping type IGBT/FRD chip
  • Positive electrode processing method of crimping type IGBT/FRD chip

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Embodiment Construction

[0042] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0043] A method for processing a front electrode of a press-bonded IGBT / FRD chip provided by an embodiment of the present invention will be described below with reference to the accompanying drawings.

[0044] figure 1 It is a schematic diagram of the implementation flow of a front electrode processing method of a crimped IGBT / FRD...

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Abstract

The invention provides a positive electrode processing method of a crimping type IGBT / FRD chip, comprising the steps that a first film layer is formed at the upper part of a first metal layer by adopting a chemical vapor deposition method, and the first film layer is etched to form a first window; the first metal layer exposed from the first window undergoes anti-splashing etching; by adopting a sputtering method, a second metal layer is disposed on the surface of a combined structure formed between the first metal layer and the first film layer, and etching is conducted on the second metal layer; the surface of the combined structure formed at the first film layer and the second metal layer is coated with a second film layer, and etching is conducted on the second film layer to form a second window for welding. Compared with the prior art, the invention is advantageous in that no improvement of the current device is required, and operation is simple.

Description

technical field [0001] The invention relates to the technical field of power electronic power devices, in particular to a method for processing a front electrode of a crimping type IGBT / FRD chip. Background technique [0002] The fully controlled power electronic device IGBT (Insulated Gate Bipolar Transistor) is widely used in the field of high-power high-voltage equipment due to its superior gate control function, low on-state loss and simple drive circuit. The fully controlled power electronic device IGBT mainly includes crimping IGBT and soldering IGBT from the packaging form, and the crimping IGBT has the following advantages compared with the soldering IGBT: [0003] ①: The internal leads are contacted and connected by crimping, which eliminates most of the welding points, which can effectively reduce the failure rate of welding points cracking due to power cycle and thermal cycle; [0004] ②: It can realize double-sided heat dissipation, so the heat dissipation effic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/285H01L23/48
CPCH01L2224/05
Inventor 高明超王耀华刘江赵哿金锐温家良潘艳
Owner GLOBAL ENERGY INTERCONNECTION RES INST CO LTD
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