Metal redundant graph drawing method for improving CMP morphology

A redundant graphics and metal technology, applied in CAD circuit design, special data processing applications, instruments, etc., can solve the problems of poor flatness, insufficient metal density, poor surface uniformity, etc., to improve the metal density and density gradient distribution uniformity performance, improve flatness, and improve yield

Inactive Publication Date: 2018-02-02
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The present invention proposes a method for drawing metal redundant graphics to improve CMP morphology, which can better solve the problems of poor surface uniformity and poor flatness caused by insufficient metal density

Method used

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  • Metal redundant graph drawing method for improving CMP morphology
  • Metal redundant graph drawing method for improving CMP morphology
  • Metal redundant graph drawing method for improving CMP morphology

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Embodiment Construction

[0025] The specific embodiments of the present invention are given below in conjunction with the accompanying drawings, but the present invention is not limited to the following embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in very simplified form and use imprecise ratios, which are only used for the purpose of conveniently and clearly assisting in describing the embodiments of the present invention.

[0026] The addition of metal dummy can effectively reduce the influence of metal line width by the process load effect of etching and chemical vapor polishing (CMP), improve the uniformity of metal line width, improve the density and density gradient distribution, and improve Wafer surface topography after CMP. The invention automatically draws metal redundant graphics through layout logic operations, and its width, length, area, and mutual distance all meet ...

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Abstract

The invention provides a metal redundant graph drawing method for improving CMP morphology. The method comprises the steps that a complete design layout of metal, through holes and all clearance layers is acquired; irregular regions allowing addition of metal redundant graphs are drawn through layout logic operation, and the irregular regions are expanded respectively to be rectangular regions; the metal redundant graphs with fixed sizes and relative positions are added with a lower left point of each region allowing addition being a starting point, and temporary graphs, waiting for post-processing, of the metal redundant graphs are formed; the temporary graphs of the metal redundant graphs are post-processed, including forbidding of addition or deletion or merging of region receding edges, extension of short edges, removal of small-sized graphs violating design rules, truncation of overlong graphs and other logic operation processes; and the post-processing logic operation processes are executed cyclically, and a final metal redundant graph layout is obtained after no error is found through checking according to the design rules. Through the method, the problems of poor surface uniformity and bad flatness caused by insufficient metal density can be better solved.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, and in particular to a metal redundancy pattern drawing method for improving CMP morphology. Background technique [0002] In addition to reflecting the logic or function of the circuit to ensure that the layout schematic (LVS check, Layout Versus Schematic Check) is verified correctly, the integrated circuit layout also needs to add some graphics that are not related to LVS verification to reduce the deviation of the process. These graphics we Call it a redundant graph (dummy). Normally, considering the surface uniformity caused by insufficient etching or excessive etching during etching and the poor flatness of the wafer surface after the chemical vapor polishing (CMP) process, the metal density must meet Density requirements specified in design rules. The addition of metal dummy patterns is widely used to adjust the density of metal in local areas, thereby improv...

Claims

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Application Information

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IPC IPC(8): G06F17/50
CPCG06F30/39
Inventor 张美丽张逸中于世瑞
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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