A method for repairing mask pattern defects

Abstract

The invention provides a method for repairing a defect of a mask pattern and relates to the technical field of semiconductors. According to the repairing method, the size of a defect mask pattern or anormal mask pattern is correspondingly reduced through reducing a pixel of the defect mask pattern or the normal mask pattern, a different area between the defect mask pattern and the normal mask pattern is amplified and the different area is a defect area, so that the position of the defect area can be easily identified and positioned. Therefore, according to the method provided by the invention, the defect repairing area can be automatically positioned through modifying parameters of a control menu, thereby successfully repairing the nanoscale microdefect.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for repairing mask pattern defects. Background technique [0002] Semiconductor integrated circuits (Integrated Circuit, referred to as IC), that is, semiconductor chips, need to go through multiple processes such as material preparation, plate making, photolithography, cleaning, etching, doping, and chemical mechanical polishing during the manufacturing process. most critical. The lithography process determines the advanced level of the semiconductor chip manufacturing process. It is precisely because of the great progress of the lithography technology that the integrated circuit manufacturing process has been brought from the micron era to the deep submicron era, and then into the nanometer era. The photolithography process requires a complete set (several pieces or up to a dozen pieces) of photoetching masking templates (several pieces or up to a dozen pieces)...

AI Technical Summary

Problems solved by technology

Once the incomplete mask pattern is transferred to the wafer, it will cause the quality of the finished wafer to be unqualified

[0004] Therefore, it is necessary to repair the mask pattern defect after the photolithography mask is produced. The repair of the mask pattern defect is a key step in manufacturing a high-quality mask. At present, the repair method of the mask pattern defect is usually manually defined. To fill (for example, deposit) or remove (for example, etch) the repaired area, first obtain the image of the mask pattern corresponding to the mask pattern defect position and the image of the corresponding position of the normal mask pattern, wherein the mask pattern defect position corresponds to The image of the mask pattern is a mask image to be repaired, and the figure corresponding to the normal mask pattern is a normal mask image, and the edge contours of the mask image to be repaired and the normal mask image are obtained by a graphics processing device, and the Overlap (overlap) comparison, if the edge profile of the mask image to be repaired has a bulge compared with the edge profile of the normal mask image, then the bulge is the defect area (also referred to as the area to be repaired), And corresponding etching repair is carried out on the defects of the photolithographic mask, and if the edge profile of the mask image to be repaired has a concave part compared with the edge profile of the normal mask image, the convex part is the defect area Correspondingly, the defect area of ​​the photolithography mask is deposited and repaired. With the rapid development of large-scale integrated circuit technology, the minimum critical dimension of the mask is reduced to 28nm node and below. Defects are difficult to ignore, but because there is not enough difference between the defect pattern and the normal pattern, the traditional pattern overlapping method cannot accurately locate the position of the defect area, resulting in failure of the repair, which reduces the quality of the mask. and can have a serious negative impact on the wafer printing process

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