Mixed annealing apparatus and annealing method

An annealing device and annealing technology, applied in the manufacturing of electrical components, circuits, semiconductor/solid-state devices, etc., can solve the problems of reducing the steepness of the diffusion region, uncontrollable edges of the diffusion region, and product damage, etc., to improve the efficiency of microwave annealing, Good absorption, avoid damage effect

Inactive Publication Date: 2018-02-16
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the rapid non-selective rapid temperature rise of the product annealed by high-power laser irradiation causes a lot of unnecessary thermal damage, and reduces the steepness requirements of the diffusion area, and even leads to high power in CMOS processes below 22 nanometers. Laser annealing will cause large damage to the product and the edge of the diffusion area cannot be controlled

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Mixed annealing apparatus and annealing method
  • Mixed annealing apparatus and annealing method
  • Mixed annealing apparatus and annealing method

Examples

Experimental program
Comparison scheme
Effect test

specific example

[0052] Set the power of the tungsten-halogen light source 4 to 2KW, and the irradiation time is 7 minutes, so that the tungsten-halogen light source 4 anneals the sample 5 in the sample chamber 1 at 2KW for 5 minutes, so that the sample 5 reaches the first constant temperature . Turn on the microwave source 3, set the microwave power of the microwave source 3 to 3KW and the application time to 2 minutes, the microwave source 3 and the tungsten halogen lamp light source 4 jointly anneal the sample 5 for 2 minutes, so that the sample 5 reaches the second constant temperature .

[0053] In this example, the annealing duration of the entire annealing process is 7 minutes. The first 5 minutes are heated by the tungsten halogen light source 4 alone, and the second 2 minutes are jointly heated by the tungsten halogen light source 4 and the microwave source 3 . Due to the irradiation of the tungsten-halogen lamp in the first 5 minutes, the dielectric constant of the local area of ​​...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a mixed annealing apparatus and annealing method, and applied to the field of semiconductor manufacturing. The apparatus comprises a sample room, a sample table, a microwave source and a halogen tungsten lamp light source; the sample table is arranged in a cavity of the sample room; the halogen tungsten lamp light source is arranged in the cavity of the sample room; the halogen tungsten lamp light source is positioned above the sample table; and an antenna of the microwave source is connected to the cavity of the sample room from the side cavity wall of the sample room.By virtue of the mixed annealing apparatus and annealing method, the technical problems of damage to the product caused by the annealing process in the CMOS process and the uncontrollable diffusion region edge can be solved, and the annealing efficiency is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a hybrid annealing device and an annealing method. Background technique [0002] In the manufacturing process of semiconductor devices and integrated circuits, thermal annealing is a very important process technology. For example, the rapid annealing of the semiconductor CMOS process is a key process for contact resistance and stress relief, which directly affects the success or failure of the CMOS process. Traditional rapid annealing uses high-power lasers for annealing. The essence of annealing is heat, and rapid temperature rise is a necessary means to eliminate stress and homogenize implanted ions. However, the rapid non-selective rapid temperature rise of the product annealed by high-power laser irradiation causes a lot of unnecessary thermal damage, and reduces the steepness requirements of the diffusion area, and even leads to high power in CMOS processes below 22 ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67H01L21/324
CPCH01L21/324H01L21/67115
Inventor 刘键景玉鹏
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap