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NBT-based semiconductor ceramic and preparation method thereof

A semiconductor and ceramic technology, applied in the field of NBT-based semiconductor ceramics and its preparation, can solve the problems of difficult control of parameters, complicated reoxidation process, difficulty in preparing PTC ceramics, etc., and achieve the effect of reducing room temperature resistivity

Inactive Publication Date: 2018-02-23
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since the oxygen content in the sintering atmosphere has a great influence on the semiconductivity and electrical properties of ceramic samples, the reoxidation process is very complicated, and the parameters are difficult to control. It is difficult to prepare PTC ceramics with higher Curie point and excellent performance. Meet the requirements of extreme environments such as aerospace

Method used

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  • NBT-based semiconductor ceramic and preparation method thereof

Examples

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Embodiment 1

[0022] A preparation method of NBT-based semiconductor ceramic material, comprising the following steps:

[0023] 1) According to the chemical formula BaTiO 3 -0.0022La 2 o 3 , mixed barium carbonate, titanium dioxide and lanthanum oxide uniformly and kept at 1150°C for 3 hours to obtain BT pre-sintered powder, which was pressed into tablets and then held at 1250°C for 2 hours to obtain BT ceramics, which were ground for 120 Mesh sieve to prepare semiconducting BT ceramic powder.

[0024] 2) According to the chemical formula Na0.5 Bi 0.5 TiO 3 , mix sodium carbonate, bismuth oxide and titanium dioxide evenly and keep warm at 950°C for 4h to prepare NBT calcined powder, press it into tablets and keep warm at 1150°C for 2h to make NBT ceramics, grind it for 120 Mesh sieve to obtain NBT ceramic powder.

[0025] 3) The semiconducting BT ceramic powder and the NBT ceramic powder according to the chemical formula 0.9Na 0.5 Bi 0.5 TiO 3 -0.1 (BaTiO 3 -0.0022La 2 o 3 ) ing...

Embodiment 2

[0027] A preparation method of NBT-based semiconductor ceramic material, comprising the following steps:

[0028] 1) According to the chemical formula BaTiO 3 -0.0022La 2 o 3 , mixed barium carbonate, titanium dioxide and lanthanum oxide uniformly and kept at 1150°C for 3 hours to obtain BT pre-sintered powder, which was pressed into tablets and then held at 1250°C for 2 hours to obtain BT ceramics, which were ground for 120 Mesh sieve to prepare semiconducting BT ceramic powder.

[0029] 2) According to the chemical formula Na 0.5 Bi 0.5 TiO 3 , mix sodium carbonate, bismuth oxide and titanium dioxide evenly and keep warm at 950°C for 4h to prepare NBT calcined powder, press it into tablets and keep warm at 1150°C for 2h to make NBT ceramics, grind it for 120 Mesh sieve to obtain NBT ceramic powder.

[0030] 3) The semiconducting BT ceramic powder and the NBT ceramic powder according to the chemical formula 0.8Na 0.5 Bi 0.5 TiO 3 -0.2 (BaTiO 3 -0.0022La 2 o 3 ) i...

Embodiment 3

[0032] A preparation method of NBT-based semiconductor ceramic material, comprising the following steps:

[0033] 1) According to the chemical formula BaTiO 3 -0.0022La 2 o 3 , mixed barium carbonate, titanium dioxide and lanthanum oxide uniformly and kept at 1150°C for 3 hours to obtain BT pre-sintered powder, which was pressed into tablets and then held at 1250°C for 2 hours to obtain BT ceramics, which were ground for 120 Mesh sieve to prepare semiconducting BT ceramic powder.

[0034] 2) According to the chemical formula Na 0.5 Bi 0.5 TiO 3 , mix sodium carbonate, bismuth oxide and titanium dioxide evenly and keep warm at 950°C for 4h to prepare NBT calcined powder, press it into tablets and keep warm at 1150°C for 2h to make NBT ceramics, grind it for 120 Mesh sieve to obtain NBT ceramic powder.

[0035] 3) The semiconducting BT ceramic powder and the NBT ceramic powder according to the chemical formula 0.7Na 0.5 Bi 0.5 TiO 3 -0.3 (BaTiO 3 -0.0022La 2 o 3 ) i...

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Abstract

The invention discloses an NBT-based semiconductor ceramic material and a preparation method thereof and belongs to the technical field of ceramics. The chemical composition formula of the NBT-based semiconductor ceramic material is (1-x)Na0.5Bi0.5TiO3-x(BaTiO3-0.0022La2O3). The preparation method comprises the following steps: by adopting barium carbonate, sodium carbonate, lanthanum oxide, bismuth oxide and titanium dioxide as materials, respectively synthesizing semiconductor BT and NBT ceramic powders, and preparing the (1-x)Na0.5Bi0.5TiO3-x(BaTiO3-0.0022La2O3) ceramic material by the processes of batching, ball milling, drying, tabletting, forming and sintering and the like according to the chemical formula. The ceramic material prepared by adopting a solid-phase method has the advantages of low cost, large yield and simple preparation process and the like. The preparation method is simple in preparation process and operation and low in cost and lays a foundation for large-scale and low-cost preparation of the PTC (Positive Temperature Coefficient) ceramic material.

Description

technical field [0001] The invention belongs to the technical field of material preparation, and in particular relates to an NBT-based semiconductor ceramic and a preparation method thereof. Background technique [0002] With the rapid development of high technology, the application of electronic ceramic components in various fields is becoming more and more extensive, but the widely used high Curie point BaTiO 3 Most of the (BT) based positive temperature coefficient (PTC) ceramic materials contain lead. Due to the continuous improvement of environmental protection requirements in various countries, the lead-free use of PTCR materials has become an inevitable trend. BaTiO with high Curie point in lead-free 3 Introduce a certain amount of high Curie point compounds containing Bi elements into the base PTC materials, such as K 0.5 Bi 0.5 TiO 3 、Na 0.5 Bi 0.5 TiO 3 etc. to replace lead to increase the phase transition temperature of the material has been extensively st...

Claims

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Application Information

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IPC IPC(8): C04B35/475C04B35/622
CPCC04B35/475C04B35/622C04B2235/3201C04B2235/3215C04B2235/3227C04B2235/3232C04B2235/3298
Inventor 蒲永平万晶
Owner SHAANXI UNIV OF SCI & TECH
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