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Samarium-doped tin-antimony phase-changing thin-film material for phase change memory and preparation method thereof

A phase-change memory and thin-film material technology, applied in the field of microelectronics, can solve problems such as unsatisfactory data retention, and achieve the effects of low power consumption, good data retention, and good thermal stability

Inactive Publication Date: 2018-02-23
JIANGSU UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the invention is to overcome prior art Sn 15 Sb 85 The defect of unsatisfactory data retention of series storage materials provides a samarium-doped tin-antimony phase-change thin film material for phase-change memory and its preparation method

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] This example prepares undoped Sn 15 Sb 85 Phase change thin film material, thickness 50nm.

[0023] The preparation steps are:

[0024] 1. Clean SiO2 2 / Si(100) substrate, cleaning the surface and back, removing dust particles, organic and inorganic impurities;

[0025] a) strong ultrasonic cleaning in acetone solution for 3-5 minutes, and rinse with deionized water;

[0026] b) Strong ultrasonic cleaning in ethanol solution for 3-5 minutes, rinse with deionized water, high-purity N 2 Blow dry the surface and back;

[0027] c) Dry the water vapor in an oven at 120°C for about 20 minutes.

[0028] 2. Preparation of Sn by radio frequency sputtering method 15 Sb 85 Film preparation:

[0029] a) Install Sn 15 Sb 85 Sputtering target, the purity of the target reaches 99.999% (atomic percentage), and the background vacuum is evacuated to 1×10 -4 Pa;

[0030] b) Set the sputtering power to 30W;

[0031] c) Using high-purity Ar gas as the sputtering gas (volume pe...

Embodiment 2

[0036] In this example, Sn doped with Sm (x=0.08, a fan-shaped material) is prepared. 15 Sb 85 Phase change thin film material, thickness 50nm.

[0037] The preparation steps are:

[0038] 1. Clean SiO2 2 / Si(100) substrate, cleaning the surface and back, removing dust particles, organic and inorganic impurities;

[0039] a) Strong ultrasonic cleaning in acetone solution for 3-5 minutes, then rinse with deionized water;

[0040] b) Strong ultrasonic cleaning in ethanol solution for 3-5 minutes, then rinse with deionized water, high-purity N 2 Blow dry the surface and back;

[0041] c) Dry the water vapor in an oven at 120°C for about 20 minutes.

[0042] 2. Prepare the thin film by radio frequency sputtering method:

[0043] a) Install Sn 15 Sb 85 For the sputtering target, a fan-shaped Sm sheet with a thickness of 2mm, a diameter of 40mm, and a central angle of 30 degrees is placed on the Sn 15 Sb 85 target surface, and make the center coincide. The purity of the ...

Embodiment 3

[0050] This example prepares Sn doped with rare earth Sm (x=0.16, two fan-shaped materials) 15 Sb 85 Phase change thin film material, thickness 50nm.

[0051] The preparation steps are:

[0052] 1. Clean SiO2 2 / Si(100) substrate, cleaning the surface and back, removing dust particles, organic and inorganic impurities;

[0053] a) Strong ultrasonic cleaning in acetone solution for 3-5 minutes, then rinse with deionized water;

[0054] b) Strong ultrasonic cleaning in ethanol solution for 3-5 minutes, then rinse with deionized water, high-purity N 2 Blow dry the surface and back;

[0055] c) Dry the water vapor in an oven at 120°C for about 20 minutes.

[0056] 2. Prepare the thin film by radio frequency sputtering method:

[0057] a) Install Sn 15 Sb 85 For the sputtering target, place two fan-shaped Sm sheets with a thickness of 2mm, a diameter of 40mm, and a center angle of 30 degrees on the surface of the Sb target, and make the centers coincide. The purity of the...

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Abstract

The invention, which belongs to the technical field of microelectronics, in particular relates to a samarium-doped tin-antimony phase-changing thin-film material for a phase change memory and a preparation method thereof. The chemical formula of the samarium-doped tin-antimony phase-changing thin-film material is (Sn15Sb85)xSmy, wherein the x is larger than 0 and is less than or equal to 0.92, they is larger than 0 and is less than or equal to 0.58, and the sum of the x and the y is equal to 100. The samarium-doped tin-antimony phase-changing thin-film material for a phase change memory has characteristics of high thermal stability, high data retentivity, and low power consumption.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a samarium-doped tin-antimony phase-change thin film material used for a phase-change memory and a preparation method thereof. Background technique [0002] At present, in order to realize the continuous development of mobile devices and Internet technology, human beings need higher speed, higher storage density and lower cost non-volatile memory. In the non-volatile memory family, phase change memory (PCRAM) has very excellent performance: fast storage speed, low energy consumption, good stability and good compatibility with existing semiconductor devices, etc. (Yifeng Hu et al., Scripta Mat Smialia, 2014, 92: 4-7). Phase-change storage technology was developed by Ovshinsky et al. in the late 1960s (Phys. Rev. Lett., 21, 1450-1453, 1968) and the early 1970s (Appl. Phys. Lett., 18, 254-257, 1971) Proposed. PCRAM stores data by using the reversible phase tr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/8825H10N70/026
Inventor 邹华胡益丰朱小芹张建豪郑龙孙月梅袁丽眭永兴
Owner JIANGSU UNIV OF TECH