Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Magnetic random access memory

A random access memory, magnetic technology, applied in static memory, digital memory information, information storage, etc., can solve the problems of data stability and reliability, improve overall performance, increase heat generation and work energy consumption, and reduce voltage. Effect

Inactive Publication Date: 2018-03-06
CETHIK GRP
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If you use different operating frequencies for reading and writing for a long time, it will inevitably have a negative impact on the stability and reliability of the data

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Magnetic random access memory
  • Magnetic random access memory
  • Magnetic random access memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Embodiment 1: The magnetic storage bit contains one MTJ module and one field effect transistor.

[0029] The information of this embodiment is stored in the MTJ module, and the information of "1" and "0" is marked with the value of magnetoresistance; the resistance of the tunnel junction can be changed by the spin transfer torque effect of the current flowing through the MTJ tunnel junction. value, to realize the rewriting of stored information; the field effect transistor provides driving current for MTJ programming and is responsible for the selection and switching of information bits in reading and writing.

[0030] Because the critical write current value of the storage bit increases with the increase of the operating frequency, and the critical current increases with the increase of the field effect transistor width; on the other hand, the critical write current value increases with the shrinkage of the MTJ diameter abbreviation. Therefore, based on the above prin...

Embodiment 2

[0033] Embodiment 2: The magnetic storage bit contains one MTJ module and multiple field effect transistors.

[0034] The same information is stored in the MTJ module, and the information of "1" and "0" is marked with the value of the magnetoresistance value; the resistance value of the tunnel junction can be changed by the spin transfer torque effect of the current flowing through the MTJ tunnel junction, Realize the rewriting of stored information; the field effect transistor provides driving current for MTJ programming and is responsible for the selection and switching of information bits in reading and writing.

[0035] like image 3 As shown, in this embodiment, the magnetic storage bit includes one MTJ module and multiple field effect transistors. For example, a storage bit is implemented by n field effect transistors MOSFETs with different widths and one MTJ, and n field effect transistors share one MTJ. By changing the width of the MOSFET to change the value of the d...

Embodiment 3

[0038] Embodiment 3: The magnetic storage bit contains multiple MTJ modules and one field effect transistor.

[0039] Similarly, the information is stored in the MTJ module, and the information of "1" and "0" is marked with the value of magnetoresistance; the resistance of the tunnel junction can be changed by the spin transfer torque effect of the current flowing through the MTJ tunnel junction. value, to realize the rewriting of stored information; the field effect transistor provides driving current for MTJ programming and is responsible for the selection and switching of information bits in reading and writing.

[0040] like Figure 4 As shown, in this embodiment, the magnetic storage bit includes n MTJs with different diameters and one field effect transistor, and the MTJs with different diameters share one field effect transistor MOSFET. By changing the diameter of the MTJ to change the critical driving current value, different operating frequencies of storage bits are ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a magnetic random access memory. The magnetic random access memory comprises storage bits with at least two working frequencies; each storage bit comprises a magnetic tunnel junction, a metal wire and a field effect transistor; and the storage bits with the different working frequencies are same in magnetic tunnel junction diameter but different in field effect transistor width, or the storage bits with the different working frequencies are different in magnetic tunnel junction diameter but same in field effect transistor width. According to the magnetic random access memory, the storage bits with the different frequencies are located on a same chip, and the working frequency of the memory can be increased along with the increment of the calculation speed of a processor and the data throughput, so that the overall working performance of a system is improved; and the working frequency of the memory can be reduced according to an actual demand when the processor is relatively idle, so that the overall voltage, heating and working energy consumption of the system can be reduced and the service life and reliability of the memory are improved.

Description

technical field [0001] The invention relates to the technical field of memory design, in particular to a magnetic random access memory. Background technique [0002] In recent years, the gap between the operating frequency of the processor and the memory has widened year by year, and the operating frequency of the memory has become a bottleneck that limits the improvement of the data processing performance of the computer system. For example, the central processing unit of a computer generally has a certain overclocking capability, but the operating frequency range of memories such as memory is limited, which hinders the increase of the operating frequency of the central processing unit. The operating frequency of the memory depends on the physical properties of the storage bits themselves. Therefore, choosing a memory with high-frequency operation capability and a wide operating frequency range to store bits can effectively help the system improve computing performance. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/16
CPCG11C11/161G11C11/1653
Inventor 李辉辉孟皓刘少鹏戴强杨成成刘波
Owner CETHIK GRP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com