Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

High-brightness white LED driving circuit

An LED-driven, high-brightness technology, applied in the field of lighting, can solve problems such as disadvantages, and achieve the effects of stable operation, compact circuit structure, and improved work efficiency

Inactive Publication Date: 2018-03-09
徐萍
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the past, electroluminescent (EL) and cold cathode fluorescent lamps (CCFL: Cold Cathode FluorescentLight) were widely used to generate white light spectrum, but these two methods require high voltage drive, which is obviously unfavorable in mobile phone and PDA applications

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-brightness white LED driving circuit
  • High-brightness white LED driving circuit
  • High-brightness white LED driving circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] The present invention will be further described below in conjunction with drawings and embodiments.

[0021] Such as figure 1 , The substrate PNP-type bandgap reference circuit is in the CMOS process, using the weighted summation of the negative temperature coefficient of VBE of the parasitic PNP transistor at a given temperature and the positive temperature coefficient of VBE to obtain a very low voltage. A and nA are substrate PNP transistors, and nA is formed by parallel connection of n PNP transistors identical to A. Therefore, Is2=n*Is1, Is is the reverse saturation current of the triode emitter junction. The feedback loop makes the potentials of the two points X and Y equal.

[0022] Such as figure 2 , The I-V bandgap reference circuit is composed of a low-voltage op amp, a start-up circuit and a bandgap reference core circuit, and the voltage of X and Y points in the two-way transistor circuit is clamped by a resistor divider method. In this way, the common-...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a high-brightness white LED driving circuit suitable for the lighting field. The circuit consists of a substrate PNP bandgap reference circuit, an I-V bandgap reference circuit,an I-V RC oscillator circuit, a hysteresis comparator circuit and a drive circuit. The circuit has the advantages of compact structure, small volume, stable work, great adaptability and low power consumption. The working efficiency is improved. The circuit has the functions of adjustable brightness, overheat protection, low voltage prompt and the like.

Description

Technical field [0001] The invention relates to a high-brightness white LED driving circuit, which is suitable for the lighting field. Background technique [0002] In recent years, with the advancement of LED manufacturing technology, the luminous efficiency of white LEDs has been gradually improved. White light LED has many advantages such as no pollution, long life, shock resistance, impact resistance, high luminous efficiency, and good high and low temperature characteristics. Compared with traditional lighting tools, semiconductor lighting tools, especially GaN-based white LED lighting, have incomparable advantages in terms of power consumption and lifespan. Traditional incandescent bulbs waste about 90% of energy by using thermoluminescent technology, while the efficiency conversion rate of light-emitting diodes is very high. Experts pointed out that the power consumption of white LED lighting is only 10% to 20% of that of incandescent lamps with the same brightness....

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H05B33/08H05B44/00
CPCH05B45/50H05B45/10H05B45/00Y02B20/30
Inventor 徐萍
Owner 徐萍
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com