High-power and high-efficiency power amplifier insensitive to source impedance and load impedance

A power amplifier, load impedance technology, applied in power amplifiers, amplifiers, amplifiers with semiconductor devices/discharge tubes, etc., can solve the problems of low load impedance sensitivity, reduce power amplifier efficiency, and design difficulty, and achieve improvement. Power gain and power capacity, improve stability and reliability, reduce the effect of mutual limitation of indicators
CN107846196AInactive Publication Date: 2018-03-27CHENGDU GANIDE TECH
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
CHENGDU GANIDE TECH
Publication Date
2018-03-27
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a high-power and high-efficiency power amplifier insensitive to source impedance and load impedance. An amplification function of a balance type amplifier is realized through adoption of four ways of three-stack transistor amplification networks, the power gain and power capacity of the balance type amplifier are greatly improved; and moreover, + / -45-degree and + / -135-degree phase-shifting control and input and output impedance matching of four ways of balance signals are realized through utilization of a multi-level T-type filtering phase shift circuit, so on the premise of low insertion loss and high efficiency, the sensitivity of the amplifier for the source impedance and the load impedance is greatly reduced, and the circuit stability and robustness are improved. According to the high-power and high-efficiency power amplifier insensitive to the source impedance and the load impedance realized by the invention, the output power is high, the power gain is high, and the low load impedance sensitivity is high.
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Description

technical field

[0001] The invention belongs to the technical field of field effect transistor microwave millimeter wave power amplifier and integrated circuit, and specifically relates to the design of a high-power and high-efficiency power amplifier insensitive to source and load impedance. Background technique

[0002] With the rapid development of 3G, 4G-LTE and other civilian communication markets, as well as the early layout of 5G communication, microwave and millimeter wave front-end transmitters are also developing in the direction of high power, high integration, and high efficiency in microwave and millimeter wave bands; in addition, due to MIMO With the wide application of technology, the system poses a severe test to the load impedance sensitivity of the terminal power amplifier. Therefore, the market urgently needs low load impedance sensitivity, high power, and high efficiency power amplifier chips for microwave and millimeter wave frequency bands.

[0003] How...

Claims

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