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LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor, formation method thereof, semiconductor device and formation method of semiconductor device

A technology of transistors and semiconductors, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as the performance impact of LDMOS transistors, achieve the effects of improving hot carrier effects, improving work performance, and saving production costs

Inactive Publication Date: 2018-04-06
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The object of the present invention is to provide an LDMOS transistor and its forming method, a semiconductor device and its forming method, so as to solve the impact on the performance of the LDMOS transistor due to hot carrier injection during the operation of the existing LDMOS transistor The problem

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  • LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor, formation method thereof, semiconductor device and formation method of semiconductor device
  • LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor, formation method thereof, semiconductor device and formation method of semiconductor device
  • LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor, formation method thereof, semiconductor device and formation method of semiconductor device

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Embodiment 1

[0058] image 3 It is a schematic structural diagram of the LDMOS transistor in Embodiment 1 of the present invention, Figure 4 for image 3 The schematic cross-sectional view of the LDMOS transistor shown in Embodiment 1 of the present invention, combined with image 3 and Figure 4 shown, the LDMOS transistor consists of:

[0059] a well region 120 and a drift region 130 located in a semiconductor substrate 110;

[0060] a source region 150 located in the well region 120;

[0061] a drain region 160 located in the drift region 130;

[0062] an isolation structure 140 located in the drift region 130, and the isolation structure 140 is located between the source region 150 and the drain region 160;

[0063] The buffer region 170 located in the drift region 130 and adjacent to the side of the isolation structure 140 away from the drain region 160 , the buffer region 170 is opposite to the doping type of the drift region 130 .

[0064] In addition, in this embodiment, in...

Embodiment 2

[0079] Correspondingly, the present invention also provides a method for forming the above-mentioned LDMOS transistor. Figure 6 It is a schematic flow chart of a method for forming an LDMOS transistor in Embodiment 2 of the present invention, Figure 7a - Figure 7e It is a schematic structural diagram of the formation process of the LDMOS transistor in Embodiment 2 of the present invention, combined with Figure 6 as well as Figure 7a - Figure 7e As shown, the forming method of the LDMOS transistor includes:

[0080] Step S10, providing a semiconductor substrate 110, forming a well region 120 and a drift region 130 respectively in the semiconductor substrate 110, and forming an isolation structure 140 in the drift region 130;

[0081] Step S20, forming a source region 150 in the well region 120, forming a drain region 160 in the drift region 130, the source region 150 and the drain region 160 are respectively located on both sides of the isolation structure 140, and on...

Embodiment 3

[0094] Based on the LDMOS transistor described above, the present invention also provides a semiconductor device having the LDMOS transistor, Figure 8 It is a schematic structural diagram of the semiconductor device in Embodiment 3 of the present invention, such as Figure 8 As shown, the semiconductor device includes the LDMOS transistor 100 and a resistance element 330 as described in the first embodiment. In a high-voltage integrated circuit, it is usually necessary to use the resistive element 330 and integrate it directly inside the integrated circuit, so that the geometric size of the formed device can be reduced. Therefore, in this embodiment, a resistance element 330 is formed by disposing a doped polysilicon layer 332 on a semiconductor substrate 110 .

[0095] Specifically, the LDMOS transistor 100 is located on the first region 110a of the semiconductor substrate 110, the resistance element 330 is located on the second region 110b of the semiconductor substrate 110,...

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Abstract

The present invention provides an LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor, a formation method thereof, a semiconductor device and a formation method of the semiconductor device. The LDMOS transistor includes a drift region, a drain region, an isolation structure, and an inverse type buffer region; the drain region and the isolation structure are arranged in the drift region, and the inverse type buffer region is arranged in the drift region at one side of the isolation structure, wherein the one side of the isolation structure is far away from the drain region. According to the LDMOS transistor provided by the invention, the inverse type buffer region is arranged in the drift region at one side of the isolation structure which is far away from the drain region, so that the electric field of a boundary region between the isolation structure and the drift region can be weakened, and therefore, a hot carrier effect caused by strong impact ionization occurs at the interface of the isolation structure can be avoided, and thus, the performance of the LDMOS transistor can be further improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an LDMOS transistor and its forming method, a semiconductor device and its forming method. Background technique [0002] Laterally Diffused Metal Oxide Semiconductor (LDMOS) transistors are widely used in power integrated circuits because they are more easily compatible with the logic process of Complementary Metal Oxide Semiconductors (CMOS). [0003] figure 1 It is a structural schematic diagram of an existing LDMOS transistor, such as figure 1 As shown, the LDMOS transistor includes: a semiconductor substrate 11, a well region 12 of the first conductivity type located in the semiconductor substrate 11, a drift region of the second conductivity type located in the well region 12 of the first conductivity type 13. The isolation structure 14 in the drift region 13, the source region 15 in the well region 12 of the first conductivity type, the drain region 16 in the drift...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L29/06H01L21/336
CPCH01L29/0619H01L29/66681H01L29/7816H01L29/0653H01L29/1045H01L29/66659H01L29/7835
Inventor 陈德艳郑大燮
Owner SEMICON MFG INT (SHANGHAI) CORP