A kind of preparation method of indium gallium arsenic infrared detector
An infrared detector, indium gallium arsenic technology, applied in the field of indium gallium arsenic infrared detector preparation, to achieve the effect of strong practicability, low cost and simple structure
Active Publication Date: 2021-08-27
SHANGHAI UNIVERSITY OF ELECTRIC POWER
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[0011] The present invention aims at the problem that the current InGaAs infrared detector can only detect near-infrared waves of a single wavelength, and proposes a method for preparing an InGaAs infrared detector. The down-conversion luminescent material on the InP cap layer in the detector can Through near-infrared waves, it does not affect the absorption of short-wave infrared by InGaAs infrared detectors, and absorbs visible light from 400nm to 600nm at the same time, and emits near-infrared light of about 1 μm to be absorbed by InGaAs infrared detectors, which can realize InGaAs infrared detection extension of the visible light range
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[0024] Such as figure 1 The schematic diagram of the expanded InGaAs infrared detector shown is a P-I-N structure infrared detector of the InP / InGaAs / InP type. In this example, metal-organic chemical vapor deposition (MOCVD) technology is used to sequentially grow on the InP semi-insulating substrate. 1), the thickness is 0.5μm, and the Si-doped concentration is 2×10 18 cm -3 N + Type InP buffer layer 4; 2), N + The thickness above the middle section of the type InP buffer layer 4 is 2.5 μm, and the Si-doped concentration is 5×10 16 cm -3 N - Type InGaAs absorber layer 3; 3) the entire N - The upper thickness of the InGaAs absorbing layer 3 is 1.0 μm, and the doped Zn concentration is 4×10 18 P-type InP capping layer 2.
[0025] SiN x As a diffusion barrier layer, the diffusion source is zinc phosphide, N-type contact electrodes Au are grown on both ends of the InP buffer layer 4, with a thickness of 20nm, and ohmic contact P-type contact electrodes Au / Zn / Au are grown...
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The invention relates to a preparation method of an indium gallium arsenic infrared detector, which is an InP / InGaAs / InP type P-I-N structure infrared detector, and a down-conversion light-emitting thin film doped with a rare earth material is prepared by a spin coating method On the InP cap layer of the indium gallium arsenic infrared detector as a conversion layer, this conversion layer absorbs 400nm~600nm visible light and emits 1μm near-infrared light. Chlorosulfur glass doped with rare earth elements is used to complete the conversion of visible light to near-infrared light, which does not affect the absorption of short-wave infrared by InGaAs infrared detectors. At the same time, it absorbs 400nm~600nm visible light and emits near-infrared light of about 1 μm. The infrared detector absorbs and realizes the expansion of the visible light range of the InGaAs infrared detector. The utility model has the advantages of simple structure and low cost. When multi-band detection is required, the method of extending the detection range of InGaAs infrared detectors to visible light has obvious advantages and is very practical.
Description
technical field [0001] The invention relates to a preparation method of an infrared detector, in particular to a preparation method of an indium gallium arsenide infrared detector with an extended visible range. Background technique [0002] In nature, any object whose temperature is higher than absolute zero will continuously radiate infrared spectrum lines to the surroundings, and the radiation emitted by the object must be transmitted through the atmosphere to reach the infrared receiving device. Due to the selective absorption and particle scattering of infrared radiation by gases such as carbon dioxide and water vapor in the atmosphere, infrared radiation is attenuated to varying degrees. Atmospheric windows are usually divided into short-wave infrared (1-3 μm), medium-wave infrared (3-6 μm), and long-wave infrared (6-15 μm). [0003] Infrared detection technology uses the hot spots or images formed by the infrared radiation difference between the target and the backgr...
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IPC IPC(8): H01L31/0232H01L31/105H01L31/18
CPCH01L31/02322H01L31/105H01L31/1844Y02P70/50
Inventor 汤乃云仇志军单亚兵龚海梅李雪邵秀梅
Owner SHANGHAI UNIVERSITY OF ELECTRIC POWER