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Reflection-type AlGaAs photocathode with quantum efficiency at wavelength of 532nm being improved, and preparation method

A quantum efficiency, photocathode technology, applied in the manufacture of light-emitting cathodes, cathode ray tubes/electron beam tubes, circuits, etc., can solve problems such as low quantum efficiency, difficulty in adapting to target detection, identification and confirmation, and low photocathode absorption rate , to achieve the effect of improving quantum efficiency, improving quantum efficiency and reducing reflectivity

Inactive Publication Date: 2018-04-17
NANJING UNIV OF SCI & TECH
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Problems solved by technology

However, the absorption rate of current photocathode is low, so the quantum efficiency is also low, and it is difficult to adapt to the detection, identification and confirmation of targets in special environments such as water mist, desert or underwater.

Method used

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  • Reflection-type AlGaAs photocathode with quantum efficiency at wavelength of 532nm being improved, and preparation method
  • Reflection-type AlGaAs photocathode with quantum efficiency at wavelength of 532nm being improved, and preparation method

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Embodiment 1

[0028] The structure diagram of the reflective AlGaAs photocathode improving the quantum efficiency at the wavelength of 532nm in the present invention is as follows figure 1 shown. The reflective AlGaAs photocathode assembly consists of GaAs substrate layer 1, buffer layer 2 of distributed Bragg mirror structure, Al x3 Ga 1-x3 As emitter layer 3 and Cs / O active layer 4 composition.

[0029] The logarithm of the buffer layer (2) of the distributed Bragg reflector structure is 10 to 30 pairs; in the buffer layer (2) of the distributed Bragg reflector structure, Al x1 Ga 1-x1 The thickness of the As layer is 40-50nm, and the Al x2 Ga 1-x2 The thickness of the As layer is 30-40nm; the Al x3 Ga 1-x3 The thickness of the As emission layer (3) is 300-600nm; Al x3 Ga 1-x3 Al composition x of As emission layer (3) 3 Satisfy 0.5≤x 3 ≤0.7, for example, a reflective AlGaAs photocathode with the following parameters can be prepared:

[0030] (1) On the high-quality n-type GaAs...

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Abstract

The invention discloses a reflection-type AlGaAs photocathode with the quantum efficiency at the wavelength of 532nm being improved, and a preparation method. The photocathode consists of a GaAs substrate layer, a buffer layer of a distributed Bragg reflector structure, an AlGaAs emitter layer and a Cs / O active layer from the bottom to the top. The buffering layer of the distributed Bragg reflector structure consists of 10-30 pairs of Al<x1>Ga<1-x1>As / Al<x2>Ga<1-x2>As overlapped layers. According to the invention, the distributed Bragg reflector structure is introduced to the buffering layer,and the setting of the thickness, number of layers and the values X1 and X2 of Al components of the Al<x1>Ga<1-x1>As / Al<x2>Ga<1-x2>As overlapped layers can reduce the reflectivity at the wavelength of532nm, can improve the absorptivity and finally improves the photoelectric emission quantum efficiency at the wavelength of 532nm.

Description

technical field [0001] The invention belongs to the technical field of blue-green light detection materials, in particular to a reflective AlGaAs photocathode and a preparation method for improving quantum efficiency at a wavelength of 532nm. Background technique [0002] Modern low-light night vision devices are developing in the direction of high sensitivity and wide spectral response. In order to improve the detection, identification and confirmation capabilities of low-light night vision devices in deserts or marine environments, it is necessary to further improve the The response of the transparent window in the blue-green light band. [0003] The spectral response range of the third-generation low-light image intensifier is usually 500-900nm. To perform high-definition low-light imaging under conditions such as underwater, sea area, desert and atmosphere, it is necessary to overcome water vapor, sea water or sand and dust in the optical path The absorption and scatter...

Claims

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Application Information

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IPC IPC(8): H01J29/04H01J9/12
CPCH01J29/04H01J9/12
Inventor 张益军刘欣欣冯琤张翔汤狸明常本康钱芸生张俊举刘磊富容国邱亚峰
Owner NANJING UNIV OF SCI & TECH
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