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Schottky rectifier with surface impurity concentration adjustment region and manufacturing method

A technology of impurity concentration and adjustment area, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of low leakage current, low forward voltage drop, high impact reliability, etc., and achieve low leakage current , low forward voltage drop, and high impact reliability

Pending Publication Date: 2018-04-20
CHONGQING ZHONGKE YUXIN ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to solve the problems of large leakage current in the prior art, and propose a Schottky rectifier with low leakage current under the premise of maintaining high reverse breakdown voltage, low forward voltage drop and high impact resistance reliability. Advantages of the device

Method used

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  • Schottky rectifier with surface impurity concentration adjustment region and manufacturing method
  • Schottky rectifier with surface impurity concentration adjustment region and manufacturing method
  • Schottky rectifier with surface impurity concentration adjustment region and manufacturing method

Examples

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Effect test

Embodiment 1

[0039] A Schottky rectifier with a surface impurity concentration adjustment region, characterized in that it includes a heavily doped first conductivity type substrate layer 10, a lightly doped first conductivity type epitaxial layer 20, and a second conductivity type guard ring region 21 , the first conductivity type surface impurity concentration adjustment region 22 , the field dielectric layer 30 , the anode metal layer 40 and the cathode metal layer 50 .

[0040] The heavily doped first conductive type substrate layer 10 covers the cathode metal layer 50 .

[0041] The lightly doped first conductive type epitaxial layer 20 covers the heavily doped first conductive type substrate layer 10 .

[0042] Both the guard ring region 21 of the second conductivity type and the surface impurity concentration adjustment region 22 of the first conductivity type cover part of the surface on the epitaxial layer 20 of the lightly doped first conductivity type. The upper surfaces of the...

Embodiment 2

[0048] A method for manufacturing a Schottky rectifier with a surface impurity concentration adjustment region in embodiment 1, is characterized in that it comprises the following steps:

[0049] 1) Covering the lightly doped first conductivity type epitaxial layer 20 on the heavily doped first conductivity type substrate layer 10 .

[0050] 2) Covering the field dielectric layer 30 on the lightly doped epitaxial layer 20 of the first conductivity type.

[0051] 3) Forming a guard ring region 21 of the second conductivity type in a closed ring structure by using the first mask layer. Its annular surrounding part is the active area.

[0052] 4) Etching the field dielectric layer 30 above the active region by using the second mask layer.

[0053] 5) Forming an implantation window on a part of the surface above the active region by using the third mask layer.

[0054] 6) Low-energy implantation of impurities of the first conductivity type into the implantation window formed in...

Embodiment 3

[0066] Using the method in Example 2, a Schottky rectifier with a surface impurity concentration adjustment region is manufactured; wherein, the first conductivity type is N-type, and the second conductivity type is P-type.

[0067] Such as figure 1 As shown, the surface impurity concentration adjustment high-voltage Schottky rectifier produced in this embodiment is characterized in that it includes a heavily doped first conductivity type substrate layer 10, a lightly doped first conductivity type epitaxial layer 20, a second conductivity type The guard ring region 21 , the first conductivity type surface impurity concentration adjustment region 22 , the field dielectric layer 30 , the anode metal layer 40 and the cathode metal layer 50 .

[0068] The N-type epitaxial layer 20 covers the N+ type substrate layer 10 . The N+ type substrate layer 10 is an arsenic impurity substrate with a doping concentration above the 19th power. The N-type epitaxial layer 20 has an impurity c...

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Abstract

The invention discloses a Schottky rectifier with a surface impurity concentration adjustment region and a manufacturing method. The Schottky rectifier with a surface impurity concentration adjustingregion comprises a first conductivity type heavily doped substrate layer, a first conductivity type lightly doped epitaxial layer, a second conductivity type protection ring region, the first conductivity type surface impurity concentration adjustment region, a field dielectric layer, an anode metal layer, and a cathode metal layer. With the Schottky rectifier with the surface impurity concentration adjustment region and the manufacturing method of the Schottky rectifier adopted, an obtained product can maintain a high reverse breakdown voltage; and the product is low in leakage current with low forward voltage drop, high anti-impact reliability and other properties ensured.

Description

technical field [0001] The invention relates to the technical field of power semiconductor power electronic devices, in particular to a Schottky rectifier with a surface impurity concentration adjustment region and a manufacturing method. Background technique [0002] Power semiconductor rectifiers are widely used in power converters and power supplies. Two common semiconductor rectifier structures are PIN rectifiers and Schottky rectifiers. [0003] Among them, the PIN rectifier has a large forward voltage drop and a long reverse recovery time, but has a small leakage and has excellent high temperature stability. It is mainly used in the medium and high voltage range above 300V. [0004] Schottky rectifiers are mainly used in the medium and low voltage range below 200V, especially in the 100V voltage level. The Schottky rectifier has a small forward voltage drop and a short reverse recovery time, but has a high reverse leakage current and poor high temperature reliability...

Claims

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Application Information

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IPC IPC(8): H01L29/872H01L29/06H01L21/329
CPCH01L29/0684H01L29/66143H01L29/872
Inventor 陈文锁钟怡欧宏旗杨婵刘建张培健
Owner CHONGQING ZHONGKE YUXIN ELECTRONICS
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