Production apparatus and method for liquid silicon

Abstract

The invention discloses a production apparatus and method for liquid silicon. The production apparatus comprises a plasma generator, a reactor, a silicon liquid loader and a tail gas separation system, which are successively connected with each other, wherein a gas condensing zone, a liquid drop forming zone and a liquid drop growing zone are successively formed in the reactor. According to the method, a material is subjected to conversion from an atomic material to tiny silicon liquid drops to large silicon liquid drops to silicon liquid in the apparatus; most silicon substances are collectedin a liquid form; and only a small part of silicon substances form silica micropowder and are then discharged from the tail gas separation system. With the production apparatus and method in the invention, a high-purity liquid silicon material can be directly obtained; operation procedures are simple; and the liquid silicon material can be directly conveyed to a downstream ingot casting, Czochralski crystal growing or silicon wafer preparation procedure, so investment cost for polysilicon production can be greatly reduced, stable and long-term operation of the production apparatus is ensured,and output is increased.

Description

technical field [0001] The invention relates to a polysilicon material preparation device and method, in particular to a liquid silicon production device and method. Background technique [0002] The existing polysilicon production methods mainly include the improved Siemens process or the fluidized bed process, of which the polysilicon produced by the improved Siemens process accounts for more than 85%. , React at a temperature of 1000-1200 ° C to produce polysilicon. The polysilicon reduction furnace needs to withstand high pressure, high temperature and corrosive gas. The furnace cylinder and chassis need to be designed with cooling water flow channels and sufficient positions for the air inlet, exhaust gas outlet and electrode outflow. The equipment manufacturing is very difficult. After the equipment is enlarged, although the production capacity of a single furnace can be increased, the manufacturing difficulty of the equipment is also increased, which virtually increa...

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Problems solved by technology

[0009] Purpose of the invention: The primary technical problem to be solved by the present invention is to overcome the deficiencies in the prior art such as complex manufacturing process, high investment, difficult production process control, and difficult operation of polysilicon production equipment. The present invention provides a new method for preparing liquid silicon. With this technical solution, high-purity liquid silicon materials can be obtained directly, the operation process is simple, and the liquid silicon materials can be directly transported to the downstream ingot casting process, Czochralski single crystal process or silicon wafer preparation process, which can greatly reduce the The investment cost of polysilicon production ensures the stable long-term operation of the production equipment and increases the output

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