Preparation method of CrSiBCN nanocomposite film
A nano-composite and thin-film technology, which is applied in the direction of ion implantation plating, metal material coating process, coating, etc., can solve the problems that CrN thin film is not suitable for application, and achieve the effect of improving hardness and reducing dry friction coefficient
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Embodiment 1
[0021] (1) Substrate cleaning: 316L stainless steel (Φ30×6 mm) with roughness polished to 50 nm 2 ) in acetone, alcohol and deionized water for 10 minutes each, blown dry with a hair dryer and clamped on the stage of the physical vapor deposition system, 17 cm away from the target; when the physical vapor deposition system background vacuum degrees up to 3.0 x 10 -6 At Torr, 50 sccm of Ar gas is introduced, the bias voltage of the stainless steel substrate is set to -450V, and the Ar gas generated by the ion beam source is used to + Ion acceleration bombards the surface of 316L stainless steel for 30 minutes to remove pollutants on the surface of the substrate and activate the deposition surface;
[0022] (2) Preparation of transition layer: Ar + After the substrate was cleaned by ion bombardment, the Ar gas flow rate was kept at 50 sccm, the bias voltage of the stainless steel substrate was adjusted to -80V, and the metal Cr target was loaded with a power of 1200 W through...
Embodiment 2
[0025] (1) Substrate cleaning: 316L stainless steel (Φ30×6 mm) with roughness polished to 50 nm 2 ) in acetone, alcohol and deionized water for 10 minutes each, blown dry with a hair dryer and clamped on the stage of the physical vapor deposition system, 17 cm away from the target; when the physical vapor deposition system background vacuum degrees up to 3.0 x 10 -6 At Torr, 50 sccm of Ar gas is introduced, the bias voltage of the stainless steel substrate is set to -450V, and the Ar gas generated by the ion beam source is used to + Ion acceleration bombards the surface of 316L stainless steel for 30 minutes to remove pollutants on the surface of the substrate and activate the deposition surface;
[0026] (2) Preparation of transition layer: Ar + After the substrate was cleaned by ion bombardment, the Ar gas flow rate was kept at 50 sccm, the bias voltage of the stainless steel substrate was adjusted to -80V, and the metal Cr target was loaded with a power of 1200 W through...
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