Spin polarized current generator and magnetic device thereof

Abstract

The invention discloses a spin polarized current generator and a magnetic device thereof. The generator comprises a first conduction layer, a second conduction layer and an antiferromagnetic layer which is located between the first conduction layer and the second conduction layer, wherein the first conduction layer, the second conduction layer and the antiferromagnetic layer form a first conduction layer-antiferromagnetic layer-second conduction layer laminated structure. According to the generator, an antiferromagnetic material and a metal material are utilized to form an asymmetric stacked structure which is used for generating spin polarized current, so that low electric resistivity is provided and the energy consumption can be reduced. The magnetic device comprises a first conduction layer and at least one stacked structure which is located on the first conduction layer and formed by an antiferromagnetic layer and a second conduction layer, wherein the antiferromagnetic layer is adjacent to the first conduction layer; a magnetic structure is arranged on the first conduction layer which is adjacent to the stacked structure; and the magnetic structure comprises a free magnetic layer. The device is capable of decreasing device heating and improving the reliability and stability of device work.

Description

technical field [0001] The present invention relates to circuits and devices having magnetic / antiferromagnetic materials or structures and their applications, and more particularly to spin-polarized current generators and their magnetic devices. Background technique [0002] Spin is one of the intrinsic properties of particles such as electrons. Electrons have two distinct spin states (often defined as spin-up and spin-down). The electrons in the current can be non-spin polarized, with equal probability of electrons in different spin states, or the electrons in the current can be spin polarized, with one spin state having more electrons than the other This type of current is called spin-polarized current. A conventional spin-polarized current can be achieved by, for example, passing a current through a (first) magnetic layer with a specific magnetization orientation, and the spin-polarized current can then be directed into another (second) magnetic layer , causing the tra...

AI Technical Summary

Problems solved by technology

The disadvantage of SHE MRAM is that the resistivity of the heavy metal layer of its core structure is very high. For example, at room temperature, the resistivity of β-Ta is ρ NM (β-Ta)=200(μΩ·cm), the spin conversion efficiency (spin Hall angle) is |θ SH (β-Ta)|=2~15%, the resistivity of β-W is ρ NM (β-W)=227~312(μΩ·cm), the spin conversion efficiency (spin Hall angle) is |θ SH (β-W)|=(33±6)%, the resistivity of Pt is ρ NM (Pt)=15.6~98.0(μΩ·cm), the spin Hall angle is |θ SH (Pt)|=0.6%~16%, because suitable, efficient heavy metal material generally has very high resistivity, when electric current passes through this heavy metal layer, according to Joule's law (Q=I 2 Rt), will generate a lot of Joule heat, causing a lot of energy consumption when writing data, and the heat generated at the same time will make the operating temperature of the device continue to rise, which seriously affects the stability of the storage device, and the resistivity of the device increases with temperature And increase, for the fixed operating voltage provided by industrial use (operating voltage V provided by each semiconductor technology node dd Limited, and there is a downward trend), the write current will continue to decrease, which may cause the problem that the write current is not enough to flip the magnetization of the free magnetic layer, and the write fails, which reduces the reliability of the device. Therefore, the resistivity Too large may become the primary factor affecting the wide application of SHE MRAM

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