Preparation method of quantum-dot thin film, light-emitting device and fabrication method of light-emitting device
A technology for electroluminescent devices and quantum dots, which is applied in the fields of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of cumbersome processes, reduced efficiency, imperfect quantum dot films, etc., to improve luminous efficiency, The effect of simplifying the preparation process
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[0034] In order to make the object, technical solution and advantages of the present invention more clear, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
[0035] refer to figure 1 and 2 , the quantum dot thin film of the embodiment of the present invention is mainly made by forming a quantum dot layered structure on a substrate, and its specific preparation method includes:
[0036] S01, uniformly dispersing the quantum dots 100 in an organic solvent to form a quantum dot solution;
[0037] S02, transferring the quantum dot solution to a mixed system of an organic solvent and water to form a quantum dot colloidal solution;
[0038] S03, providing a substrate 11 with a pattern, and coating the quantum dot colloid solution on the substrate 11;
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