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Semi-superjunction fs IEGT structure and its fabrication method

A manufacturing method, semi-superjunction technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as large short-circuit current, reduced forward conduction voltage drop, poor short-circuit capability, etc., and achieve turn-off time Effects of increased, reduced conduction voltage drop, and high short-circuit capability

Active Publication Date: 2020-03-13
XIAN LONTEN RENEWABLE ENERGY TECH +1
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  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The trench gate structure can reduce the forward voltage drop due to the high cell density, but its short-circuit current is large, resulting in poor short-circuit capability

Method used

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  • Semi-superjunction fs IEGT structure and its fabrication method
  • Semi-superjunction fs IEGT structure and its fabrication method
  • Semi-superjunction fs IEGT structure and its fabrication method

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Embodiment Construction

[0029] The present invention will be described in detail below in combination with specific embodiments.

[0030] The field-stop IGBT (Field-Stop IGBT, FS IGBT) can achieve a good compromise between on-state loss and device withstand voltage as well as on-state loss and switching loss. The electron injection enhanced gate transistor (Injection Enhancement Gate Transistor, IEGT) adopts a dummy trench structure, which produces an electron injection enhancement effect, reduces the device conduction voltage drop, and reduces the channel density, which can improve the short circuit capability of the device. Semi-superjunction IEGT applies superjunction theory to IGBT chip design, which can reduce the thickness of the drift region and reduce the conduction voltage drop and switching loss at the same time.

[0031] The existing FS IGBT or IEGT structure is optimized in some parameters such as breakdown voltage, conduction voltage drop, switching loss and short-circuit capability. The...

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Abstract

The invention relates to a semi-super-junction FS IEGT structure and a manufacturing method thereof. A semi-super-junction FS IEGT structure is used by a device cell design, the dynamic and static parameters can reach a better compromise, and the overall performance of the device is improved. A dummy trench structure is employed by the IEGT structure of the invention, a dummy trench is not connected to an emitter, the trench density is reduced, and the device short circuit ability can be improved. At the same time, a dummy trench area has no hole trench, thus holes are accumulated in the area,an IE effect is generated, a conductivity modulation effect is enhanced, and turn-on voltage drop is reduced. Since the hole injection at a collector side is not enhanced, the turn-off time is not increased significantly. According to the IEGT structure of the present invention, low turn-on voltage drop and switching loss can be achieved, and the IEGT structure has high short circuit ability.

Description

technical field [0001] The invention relates to the technical field of semiconductor power devices, in particular to a semi-superjunction FS IEGT structure and a manufacturing method thereof. Background technique [0002] Insulated gate bipolar transistor (Insulate Gate Bipolar Transistor, IGBT) is very popular among power switching devices in the field of high voltage and medium switching speed due to its characteristics of high voltage resistance, low on-resistance, simple driving and relatively fast switching speed. Ideal choice. According to different device structures, IGBTs include Punch Through IGBTs, Non Punch Through IGBTs and Field-Stop IGBTs (FS IGBTs). The FS IGBT with a trench gate structure can better improve the trade-off relationship between conduction voltage drop and switching loss. The trench gate structure can reduce the forward conduction voltage drop due to the higher cell density, but its short-circuit current is large, resulting in poor short-circui...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/331H01L29/06H01L29/739
CPCH01L29/0684H01L29/66333H01L29/7398
Inventor 周宏伟闫宏丽刘鹏飞杜忠鹏徐西昌
Owner XIAN LONTEN RENEWABLE ENERGY TECH
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