Snapshot imaging spectrometer based on array phase mirror and manufacturing method
An imaging spectrometer and reflector technology, applied in interference spectroscopy, spectrometry/spectrophotometry/monochromator, radiation pyrometry, etc., to achieve good real-time performance, fast detection speed, and high integration
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specific Embodiment approach 1
[0050] Specific implementation mode 1. Combination Figure 1 to Figure 7 Describe this embodiment, based on the array phase mirror snapshot imaging spectrometer, including a collimator 1, a micro imaging mirror array 2, a beam splitter 3, a plane mirror 4, an array phase mirror 5, a relay imaging mirror 6 and an area array Detector 7.
[0051] The collimating mirror 1 collimates the incident beam from the target scene into parallel light, and the micro-imaging mirror array 2 divides the parallel light in the horizontal space to form multiple parallel imaging channels, and arrays them on the focal plane of the image side Imaging: the beam splitter 3 equally divides the intensity of the array image field and then projects it onto the plane mirror 4 and the array phase mirror 5 respectively, so as to obtain two coherent image field arrays of the target. The plane mirror 4 and the array phase mirror 5 are in mirrored positions with respect to the beam splitter. The array phase m...
Embodiment 1
[0082] Example 1: for Figure 8 The grid beam splitter shown in s is manufactured, and the material is a double-sided polished (100) single crystal silicon wafer with high flatness and high parallelism. Its preparation method is:
[0083] 1. Growth or evaporation of silicon dioxide and silicon nitride and other dielectric films or composite films on the cleaned double-sided polished single crystal silicon surface as a masking film;
[0084] 2. Directional photolithography to expose the side groove pattern, and remove the masking film in the side groove pattern by etching to expose the surface of the single crystal silicon. Use single crystal silicon anisotropic etching solution to etch the side groove, and the etching depth is equal to the final thickness of the beam splitter window; the shape of the side groove can also be formed by arranging multiple rectangles or squares at a certain distance apart from the figure shown in the figure.
[0085] 3. Perform a second photolit...
Embodiment 2
[0087] Embodiment 2: For both horizontal and vertical grid rib structures Figure 9 The double-sided grating beam splitter of f can be manufactured by the above method, the difference is that it is necessary to prepare a double-sided masking film, which is realized by double-sided photolithography and double-sided etching, and the upper and lower surface patterns are the same. In the first photolithographic etching, the sum of the etching depths of the upper and lower surface side grooves is the final thickness value of the beam splitter window.
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