Burr detection circuit with temperature and process compensation functions

A detection circuit and compensation voltage technology, which is applied in the direction of measuring electrical variables, measuring current/voltage, measuring devices, etc., can solve the problems of poor compensation effect, low accuracy of detection points, and changes, etc., and achieve wide application range, temperature and Good process deviation, stable and reliable effect

Active Publication Date: 2018-06-15
成都三零嘉微电子有限公司
View PDF6 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] These circuits have fast response speed, simple structure, and low power consumption, but the detection point accuracy is not high, and the detection point will change with the change of temperature and process angle.
In the patent CN104714193A, the designed temperature and process angle compensation module can improve the accuracy of the detection point. The circuit obtains reference voltages VDDIN1 and VDDIN2 from the temperature and proces

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Burr detection circuit with temperature and process compensation functions
  • Burr detection circuit with temperature and process compensation functions
  • Burr detection circuit with temperature and process compensation functions

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] The technical solution of the present invention will be further described in detail below in conjunction with the accompanying drawings, but the protection scope of the present invention is not limited to the following description.

[0031] "First", "second" and the like in the present invention are only used for distinguishing descriptions, and should not be understood as indicating or implying relative importance.

[0032] Such as figure 2 As shown, a glitch detection circuit with temperature and process compensation functions includes a temperature process compensation voltage generation and bias current generation circuit, a third PMOS transistor 250, a fourth PMOS transistor 260, a first low-pass filter circuit, a second Low-pass filter circuit and high-pass filter circuit;

[0033] The temperature process compensation voltage generation and the compensation voltage output by the bias current generation circuit are connected to the input terminal of the first low...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a burr detection circuit with temperature and process compensation functions. The compensation voltage generated by a temperature process compensation voltage generation circuit and output by a bias current generation circuit is connected with the input end of a first low-pass filter circuit, the output end of a high-pass filter circuit and the source electrode of a fourthPMOS tube, and the bias current generated by the temperature process compensation voltage generation circuit and output by the bias current generation circuit is connected with the drain electrodes ofthe third PMOS tube and the fourth PMOS tube and serves as an output signal; the output end of the first low-pass filter circuit is connected with the source electrode of the third PMOS tube, the grid electrode of the third PMOS tube is connected with the input end of the power supply VDD and the input end of the second low-pass filter circuit; the source electrode of the fourth PMOS tube is further connected with the high-pass filter circuit, the high-pass filter circuit is connected with the power supply VDD, and the grid electrode of the fourth PMOS tube is connected with the second low-pass filter circuit. The device is simple in circuit structure and stable and reliable in work, the temperature and process deviation can be well compensated, and the application range is wide.

Description

technical field [0001] The invention relates to the field of integrated circuits, in particular to a burr detection circuit with temperature and process compensation functions. Background technique [0002] In the case of large glitches in the power supply, the logic system is prone to wrong timing or flipping, and enters an abnormal working state, resulting in internal data errors, operation errors, or abnormal reading errors of memory contents, resulting in internal information leakage. The power glitch detection circuit generates an alarm signal when a glitch signal is detected, which can effectively prevent errors and ensure system safety. [0003] Smart cards are widely used in various fields. Smart cards in high-security fields such as identity authentication and finance have higher requirements for attack defense capabilities. In security attacks against smart cards, fault injection attacks based on power glitches have been widely used. In this kind of attack, the at...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G01R31/40G01R19/165
CPCG01R19/16519G01R31/40
Inventor 冯纯益朱翔胡杨川范伟力廖乾兰程福军
Owner 成都三零嘉微电子有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products