Three-dimensional integrated packaging based on millimeter wave antenna and silicon-based component

A millimeter wave antenna, integrated packaging technology, applied in antenna parts, antenna supports/installation devices, antennas, etc., can solve the problems of backward packaging methods, inability to meet miniaturization and low cost, serious microwave loss, etc., and achieve integrated high degree of effect

Active Publication Date: 2018-06-15
南京国微电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] It can be seen from the above that the existing technology has the following problems: the RF front-end module of the antenna and components that can realize the millimeter w

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  • Three-dimensional integrated packaging based on millimeter wave antenna and silicon-based component
  • Three-dimensional integrated packaging based on millimeter wave antenna and silicon-based component

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Embodiment

[0033] Such as figure 1 , figure 2 A three-dimensional integrated package of a novel millimeter-wave antenna and a silicon-based multi-channel component is shown. Its design architecture includes a microstrip patch antenna array, a high-resistivity silicon substrate, a BCB medium with large-scale multilayer wiring, a frame with a TSV structure, and a double-sided patterned cover.

[0034] The millimeter-wave microstrip patch antenna array is composed of 2×2 high-bandwidth, high-gain radiating elements, and its feeder is connected to the single-channel output of the component by four 3D vertically transmitted TSVs. By optimizing the three-dimensional structure and feeding network of the new radiating unit, the high gain and high bandwidth of the millimeter-wave array antenna are realized. The TSV inside the high-resistivity silicon substrate has an aspect ratio of 10:1 and is filled with metal Cu. The dielectric on the bottom surface of the high-resistivity silicon substrat...

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Abstract

The present invention discloses a three-dimensional integrated packaging based on a millimeter wave antenna and a silicon-based multi-channel component. The packaging comprises a radiation layer, wherein the radiation layer is a micro-strip patch antenna array; a high resistivity silicon substrate with a TSV feeding structure; a dielectric wiring layer with microwave wirings and digital wirings; asurrounding frame with a TSV three-dimensional vertical transmission structure and an air-tightness packaging cover plate with a TSV transmission structure. According to the packaging, by integratingthe micro-strip patch antenna array, microwave chip(s), digital chip(s) and passive device(s) in a same module via a MEMS process at the same time, the middle part of the surrounding frame has the TSV structure capable of realizing vertical transmission of microwave signal(s), so that integration degree is relative high, the microwave properties are good, the multi-functionalization and the miniaturization of the components can be realized.

Description

technical field [0001] The invention relates to a three-dimensional integration technology of a millimeter-wave antenna and a silicon-based multi-channel component, in particular to a three-dimensional integrated packaging of a millimeter-wave antenna and a silicon-based component. Background technique [0002] At present, the trend of radio frequency components is developing in the direction of miniaturization, light weight, array, and low power consumption. Traditional radio frequency components adopt LTCC + micro-assembly process, PCB board process + micro-assembly process, and the chips are interconnected through gold wire planes, and are packaged in a hermetic package. With the rise of MEMS technology, the design idea of ​​radio frequency components began to consider the use of Si substrates instead of traditional microwave dielectric ceramic substrates and PCB boards. Small loss and short delay. [0003] The traditional integration of antennas and components adopts m...

Claims

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Application Information

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IPC IPC(8): H01L23/58H01L23/522H01Q1/22
CPCH01L23/522H01L23/58H01Q1/2283
Inventor 沈国策周骏
Owner 南京国微电子有限公司
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