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Light-emitting diode

A technology of light-emitting diodes and electrodes, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve problems such as difficult high-level integration, and achieve the effect of simplifying the manufacturing process

Active Publication Date: 2018-06-15
FUJIAN PRIMA OPTOELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, ESD diodes require a certain area, which will occupy a part of the light-emitting area of ​​the diode, so this method has the disadvantage of being difficult to integrate

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Such as figure 1 Shown is a cross-sectional view of the light-emitting diode designed in this embodiment. The light emitting diode comprises: a substrate (10), an n-type nitride semiconductor layer (21) formed on the upper surface of the substrate (10), and an active layer (23) formed on a part of the upper surface of the n-type nitride semiconductor layer (21). ), forming a p-type nitride semiconductor layer (25) on the upper surface of the active layer, and forming a p-type electrode (70) on the upper surface of the p-type nitride semiconductor layer (25); An n-type electrode (60) formed in another part of the area; on the sides of the p-type nitride semiconductor layer (25) and the active layer (23) adjacent to the n-type electrode (60) and the p-type nitride semiconductor layer (25) An insulating layer (30) formed at a local position on the upper surface; a metal bridge (40) formed on the upper end surface and side surfaces of the n-type electrode (60), and the upp...

Embodiment 2

[0048] Such as Figure 4 Shown is a cross-sectional view of the light-emitting diode designed in this embodiment. The light emitting diode comprises: a substrate (10), an n-type nitride semiconductor layer (21) formed on the upper surface of the substrate (10), and an active layer (23) formed on a part of the upper surface of the n-type nitride semiconductor layer (21) , a p-type nitride semiconductor layer (25) is formed on the active layer (23), and a p-type electrode (70) is formed on the upper surface of the p-type nitride semiconductor layer (25); on the n-type nitride semiconductor layer (21) An n-type electrode (60) formed on another part of the surface; on the sides of the p-type nitride semiconductor layer (25) and the active layer (23) adjacent to the n-type electrode (60) and the p-type nitride semiconductor layer (25 ) an insulating layer (30) formed at a local position on the upper surface; on the upper end surface and side surfaces of the n-type electrode (60), ...

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Abstract

The invention relates to a light-emitting diode. The light-emitting diode comprises a substrate, an n-type nitride semiconductor layer, an active layer, a p-type nitride semiconductor layer, a p-typeelectrode, an n-type electrode, an insulation layer and a metal bridge, wherein the n-type nitride semiconductor layer is formed on an upper surface of the substrate, the active layer is formed at a preset region of an upper surface of the n-type nitride semiconductor layer, the p-type nitride semiconductor layer is formed on an upper surface of the active layer, the p-type electrode is formed onan upper surface of the p-type nitride semiconductor layer, the n-type electrode is formed at the other preset region of the upper surface of the n-type nitride semiconductor layer, the insulation layer is in contact with an upper end surface of the p-type nitride semiconductor layer and side surfaces of the p-type nitride semiconductor layer and the active layer, and the metal bridge is in contact with the insulation layer and the n-type electrode. With the light-emitting diode proposed by the invention, the light-emitting diode for protecting static discharging by the metal bridge is provided.

Description

technical field [0001] The invention relates to a light emitting diode. Background technique [0002] In a semiconductor light emitting device, when a forward voltage is applied to the light emitting device, holes of the p-type semiconductor layer recombine with electrons of the n-type semiconductor layer, emitting light of a wavelength corresponding to bandgap energy. Nitride semiconductors (AlxInyGa1-x-yN; 0≤x≤1, 0≤y≤1, 0≤x+y≤1) are prominent materials in light-emitting devices, which can be changed by changing the ratio of aluminum, indium, and gallium emit light of different wavelengths. [0003] However, the difference in lattice constant and the difference in thermal expansion coefficient between the substrate and the semiconductor tend to cause crystal defects in the nitride semiconductor. When high voltage is applied to the light-emitting diode from the outside, the current will concentrate at the position of the crystal defect, which will damage the light-emitting...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/48
CPCH01L33/0033H01L33/005H01L33/48
Inventor 吴琼李威平
Owner FUJIAN PRIMA OPTOELECTRONICS CO LTD