Unlock instant, AI-driven research and patent intelligence for your innovation.

Photoelectric device based on two-dimensional micrometer belts and preparation method thereof

A technology for optoelectronic devices and micro-stripes, applied in electrical components, semiconductor devices, circuits, etc., can solve the problems of high density of surface states, slow response rate, and limited illuminated area, and achieve simple structure, simple preparation method, and corresponding speed. superior effect

Inactive Publication Date: 2018-06-19
SUN YAT SEN UNIV
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the nanowire itself has some defects, for example, the surface state density is relatively large, the carrier relaxation time is very long, and the illuminated area is limited, etc.
Therefore, for these defects, the detection of nanobelts has always been at a high responsivity, but the response rate is as slow as hundreds of thousands of seconds, which brings great difficulties to practical applications.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photoelectric device based on two-dimensional micrometer belts and preparation method thereof
  • Photoelectric device based on two-dimensional micrometer belts and preparation method thereof
  • Photoelectric device based on two-dimensional micrometer belts and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] figure 1 Shown is a schematic structural view of a photoelectric device based on a two-dimensional microribbon. The optoelectronic device is composed of a ZnO microribbon and an intervening finger electrode. The quantity is 11 pairs or more, and the finger spacing is 5-20 um. Under the illumination, photogenerated carriers are generated on the surface of the optoelectronic device, and then under the applied electric field, they are collected by the closely-packed interdigitated electrodes to form electrical signals.

[0044] Compared with traditional one-dimensional materials such as micron wires and nanowires, the two-dimensional micro-ribbons used in the optoelectronic devices have unique and natural advantages. It has higher crystal quality and smaller surface state density, which effectively reduces the phenomenon of defect state light emission during photodetection of the device; in terms of size, the micron-scale two-dimensional brings great convenience to the pr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a photoelectric device based on two-dimensional micrometer belts and a preparation method thereof. The photoelectric device based on the two-dimensional micrometer belts is formed by micrometer belts and interdigital electrodes, the interdigital electrodes are arranged on the two-dimensional micrometer belts in pairs by employing the photolithography, and the interdigital interval of each interdigital electrode is 5-20 [mu]m. The photoelectric device is prepared by following steps: S1, preparing the two-dimensional micrometer belts; S2, fixed installing the micrometer belts obtained in S1 on a substrate to obtain a micrometer-belt-substrate composition; S3, installing the interdigital electrodes on the surface, provided with the micrometer belts, of the micrometer-belt-substrate composition obtained in S2 by employing the photolithography to obtain a micrometer-belt-substrate-interdigital-electrode composition; and S4, plating metal electrodes on the surface ofthe micrometer-belt-substrate-interdigital-electrode composition obtained in S3 to obtain the photoelectric device. According to the photoelectric device, excellent performances are represented in high responsivity and high corresponding rate during detection, and a solid basis is laid for realizing double-photon detection of the photoelectric device.

Description

technical field [0001] The invention relates to the technical field of photoelectric components and devices, in particular to a photoelectric device based on a two-dimensional microribbon and a preparation method thereof. Background technique [0002] With the development of nanotechnology, nanomaterials have gradually entered human production and life, bringing great convenience to human development. Especially in the field of optoelectronics, nano-lasers, nano-generators, and nano-detectors have appeared in people's field of vision one after another. However, since the development of nanomaterials, there are still many problems for us to study and dig. Although many research results have been reported, an ideal explanation has not been given, and there are many problems such as the performance of some devices far from reaching the actual application. Especially in the field of photoelectric detection of nanostructures, the performance of the ubiquitous detectors has been...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/08H01L31/0264H01L31/18
CPCH01L31/0224H01L31/0264H01L31/08H01L31/18Y02P70/50
Inventor 朱海楼观林陈安琪吴雁艳陈智阳任昱昊
Owner SUN YAT SEN UNIV
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com