Organic photoelectric material with boron bridged 2,2'-dithiophene structure and application of organic photoelectric material
An organic optoelectronic material, dithiophene technology, which is applied in the field of organic optoelectronic materials with boron-bridged dithiophene structure, can solve the problems of insufficient development of OLED materials, lagging behind the requirements of panel manufacturing enterprises, and shortage, etc., so as to facilitate the transmission of electrons , Improve electron affinity, improve the effect of molecular stability
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Publication Date
- 2018-06-22
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention relates to the field of organic photoelectric materials, in particular to an organic photoelectric material containing a boron-bridged dithiophene structure and an application thereof. Background technique
[0002] Organic Light Emitting Diode (OLED) is known as the most promising "dream" display technology in the 21st century due to its characteristics of self-luminescence, wide viewing angle, fast response and simple manufacturing process. The electroluminescent mechanism of OLED is that after electrons and holes are respectively injected from the cathode and anode, they combine in the light-emitting molecules through the multi-layer organic functional layer between the two electrodes to form excitons, and the excitons radiate and decay to emit light. However, because the mobility of electrons and holes in organic materials is usually difficult to equalize, it is easy to cause carrier imbalance and ultimately affect the efficiency and l...
Examples
Embodiment 1
[0049] Embodiment 1. Preparation of organic optoelectronic materials
Embodiment 11
[0050] The synthesis of embodiment 11 compound 1:
[0051] Dissolve 3,3'-dibromo-5,5'-di-tert-butyl-2,2'-bithiophene (4.36g, 10.0mmol) in 100mLTHF, cool down to -70°C, add n-butyllithium dropwise n-Hexane solution (12mL, 2.0mol / L), after the dripping, keep warm for 1.0hrs. Control the internal temperature to less than -70°C, add a THF solution of 4-(boron dichloride)-N,N-diphenylamine aniline (3.5g, 11mmol, 0.1mol / L) dropwise, and keep it warm for 3.0hrs after the dropping , slowly warming up to room temperature, poured into 100g saturated aqueous sodium chloride solution, layered, the organic phase was washed with saturated aqueous sodium chloride solution, dried, and desolvated to obtain 5.6g of a brown-yellow viscous liquid. Recrystallized using n-hexane to obtain off-white solid particles (2.9 g, yield 54.61%). Using DEI-MS to identify the compound, formula C 34 h 34 BNS 2 , detection value [M+1] + =532.49, calculated value 531.58.
Embodiment 12
[0052] The synthesis of embodiment 12 compound 2:
[0053] Dissolve 3,3'-dibromo-5,5'-di-tert-butyl-2,2'-bithiophene (4.36g, 10.0mmol) in 100mLTHF, cool down to -70°C, add n-butyllithium dropwise n-Hexane solution (12mL, 2.0mol / L), after the dripping, keep warm for 1.0hrs. Control the internal temperature to less than -70°C, add 4-(boron dichloride)-N,N-bis(4-isopropylphenyl)aniline THF solution (4.5g, 11mmol, 0.1mol / L) dropwise, drop After completion, keep the reaction for 3.0 hrs, slowly warm up to room temperature, pour into 100 g of saturated aqueous sodium chloride solution, separate layers, wash the organic phase with saturated aqueous sodium chloride solution, dry, and remove the solvent to obtain 6.5 g of brown-yellow viscous liquid. Recrystallized using n-hexane to obtain off-white solid particles (3.4 g, yield 55.28%). Using DEI-MS to identify the compound, formula C 40 h 46 BNS 2 , detection value [M+1] + =615.79, calculated value 615.74.
[0054] Compounds 1...