Semiconductor device and formation method thereof

Abstract

The invention relates to a semiconductor device and a formation method thereof. The formation method comprises that pre-non-crystallization processing is carried out on a source-drain doped region exposed out of the bottom of a first through hole; after pre-non-crystallization processing, a protection layer is formed on the source-drain doped region exposed out of the bottom of the first through hole; a pattern layer filling the first through hole is formed on the protection layer, and the pattern layer positioned in the top of a dielectric layer includes an opening; the dielectric layer is etched along the opening till the top of a gate structure is exposed, and a second through hole out of which the top of the gate structure is exposed is formed in the dielectric layer; the pattern layeris removed in the oxygen-containing atmosphere; the protection layer is removed; a metal contact layer is formed on the source-drain doped region exposed out of the bottom of the first through hole;and a conductive plug filling the first through hole is formed on the metal contact layer, and a gate plug filling the second through hole is formed at the same time. The contact resistance between the source-drain doped region and the metal contact layer is reduced, and the electrical performance of the semiconductor device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor device and a forming method thereof. Background technique [0002] As the integration of semiconductor devices continues to increase, the critical dimensions of semiconductor devices continue to decrease, and correspondingly many problems have arisen, such as the corresponding increase in the surface resistance and contact resistance of the device's drain-source region, resulting in a decrease in the response speed of the device and signal occurrence. Delay. Therefore, an interconnection structure with low resistivity becomes a key element in the manufacture of highly integrated semiconductor devices. [0003] In order to reduce the contact resistance of the drain-source doped region of the device, a metal contact layer is formed on the source-drain doped region, and the material of the metal contact layer is metal silicide. The metal silicid...

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Problems solved by technology

[0004] However, the electrical performance of semiconductor devices formed by existing technologies still needs to be improved

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