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Niobium oxide gating appliance based on zirconia tunneling layer and its manufacturing method

A gating device and niobium oxide technology, applied in the field of information storage, can solve the problems of inability to meet the requirements of ultra-large-scale storage integration, low nonlinear ratio of the gating tube, etc., and achieve a safe and reliable cmos process, simple process, and good cycle tolerance. sexual effect

Active Publication Date: 2018-06-29
HUBEI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the nonlinearity of gating tubes is relatively low, which cannot meet the integration requirements of ultra-large-scale storage. Therefore, improving the nonlinear ratio of gating devices has become the primary goal of research.

Method used

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  • Niobium oxide gating appliance based on zirconia tunneling layer and its manufacturing method
  • Niobium oxide gating appliance based on zirconia tunneling layer and its manufacturing method
  • Niobium oxide gating appliance based on zirconia tunneling layer and its manufacturing method

Examples

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Effect test

Embodiment 1

[0032] A niobium oxide gating device based on a zirconia tunneling layer in this embodiment, the device includes a bottom electrode layer 1, a tunneling layer 2, a conversion layer 3 and a top electrode layer 4 in sequence from bottom to top, wherein the The bottom electrode layer is made of TiN material, and the tunneling layer is made of zirconia (ZrO 2 ) thin film material, the conversion layer is a niobium oxide thin film material, and the top electrode layer is a Pt thin film material; the thickness of the bottom electrode layer is 200nm, the thickness of the tunneling layer is 3nm, and the thickness of the conversion layer The thickness of the top electrode layer is 45nm, and the thickness of the top electrode layer is 200nm; the shapes of the bottom electrode layer, the tunneling layer, the conversion layer and the top electrode layer are all square, and the side length of the square is 0.8 μm, and the unit structure of the gate device Schematic such as figure 1 shown....

Embodiment 2

[0044] A niobium oxide gating device based on a zirconia tunneling layer in this embodiment, the device includes a bottom electrode layer, a tunneling layer, a conversion layer and a top electrode layer in sequence from bottom to top, wherein the bottom electrode layer is TiN material, the tunneling layer is zirconia (ZrO 2 ) thin film material, the conversion layer is a niobium oxide thin film material, and the top electrode layer is a Pt thin film material; the thickness of the bottom electrode layer is 200nm, the thickness of the tunneling layer is 3nm, and the thickness of the conversion layer The thickness of the top electrode layer is 45nm, and the thickness of the top electrode layer is 200nm; the shapes of the bottom electrode layer, the tunneling layer, the conversion layer and the top electrode layer are all square, and the side length of the square is 1 μm.

[0045] The niobium oxide gating device based on the zirconia tunneling layer described above in this embodim...

Embodiment 3

[0056] A niobium oxide gating device based on a zirconia tunneling layer in this embodiment, the device includes a bottom electrode layer, a tunneling layer, a conversion layer and a top electrode layer in sequence from bottom to top, wherein the bottom electrode layer is FTO material, the tunneling layer is zirconia (ZrO 2 ) thin film material, the conversion layer is a niobium oxide thin film material, and the top electrode layer is a Pt thin film material; the thickness of the bottom electrode layer is 50nm, the thickness of the tunneling layer is 1nm, and the thickness of the conversion layer The thickness of the top electrode layer is 50nm; the shape of the bottom electrode layer, the tunneling layer, the conversion layer and the top electrode layer are all square, and the side length of the square is 100nm.

[0057] The niobium oxide gating device based on the zirconia tunneling layer described above in this embodiment is prepared according to the following method, and t...

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Abstract

The invention relates to a niobium oxide gating appliance based on zirconia tunneling layer and its manufacturing method. The gating appliance orderly comprises a bottom electrode layer, a zirconia tunneling layer, a niobium oxide converting layer and a top electrode layer from bottom to top; the thickness of the bottom electrode layer is 50-300nm, the thickness of the tunneling layer is 1-5nm; the thickness of the converting layer is 30-100nm and the thickness of the top electrode layer is 50-300nm; the tunneling layer, the converting layer and the top electrode layer are formed by a magneticcontrol sputtering method. A layer of ultra-thin zirconia tunneling layer is added between the niobium oxide converting layer and the bottom electrode layer, the zirconia tunneling layer effectivelyreduces the operation current and operation voltage of the appliance, thus the using consumption of the appliance is significantly reduced, the high-impedance state resistance value is increased, andthe nonlinearity is promoted; therefore, the gating appliance is high in nonlinear property value and is of great development potential and application value.

Description

technical field [0001] The invention relates to information storage technology, more specifically, the invention relates to a niobium oxide gating device based on a zirconium oxide tunneling layer and a manufacturing method thereof. Background technique [0002] The traditional polysilicon flash memory technology faces a series of technical limitations and theoretical limits after shrinking to a technology node below 20nm, and it is difficult to meet the ultra-high-density storage requirements. Therefore, the development of new storage technologies has become an urgent need for the next generation of high-density storage devices. Resistive RAM (RRAM) has the advantages of small cell size, simple device structure, fast operation speed, low power consumption, good miniaturization, and easy integration. It has become a strong competitor for the next generation of non-volatile memory technology and has broad application prospects. . However, there is an obvious crosstalk proble...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/24H01L45/00
CPCH10B63/20H10N70/011H10N70/8833
Inventor 马国坤陈傲王浩何玉立陈钦
Owner HUBEI UNIV
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