Enhanced GaN-based HEMT (high electron mobility transistor) device and manufacturing method thereof

Abstract

The invention discloses an enhanced GaN-based HEMT (high electron mobility transistor) device which comprises a substrate layer, a buffer layer, a gallium nitride channel layer, an Al (ln, Ga, Sc) N barrier layer, a P-type cap layer and a silicon nitride passivation layer stacked in sequence from bottom to top, wherein the buffer layer is composed of gallium nitride and aluminum nitride. The enhanced GaN-based HEMT device further comprises an N-type diffusion layer, a source electrode, a drain electrode and a gate electrode, wherein the N-type diffusion layer is arranged in the P-type cap layer and the Al (ln, Ga, Sc) N barrier layer; the source electrode and the drain electrode are arranged on the upper surface of the Al (ln, Ga, Sc) N barrier layer; the gate electrode is arranged on theupper surface of the P-type cap layer and positioned between the source electrode and the drain electrode; the N-type diffusion layer is positioned between the gate electrode and the drain electrode and between the gate electrode and the source electrode. A depletion region is formed between the gate electrode and the drain electrode, so that the device has high breakdown voltage. The invention further discloses a manufacturing method of the enhanced GaN-based HEMT device. A P-type cap etching process involved in the manufacturing process of the enhanced GaN-based HEMT device depending on an etching process is saved in the prior art and modified into an ion implantation technology, and the consistency of the manufacturing process of the enhanced GaN-based HEMT device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an enhanced GaN-based HEMT device and a preparation method thereof. Background technique [0002] Wide bandgap semiconductor GaN material has become an ideal material for a new generation of semiconductor power devices due to its characteristics of large bandgap width, high critical breakdown electric field, and high electron saturation velocity. In recent years, the GaN-based HEMT device structure represented by Al(ln, Ga, Sc)N / GaN, which generates a high two-dimensional electron gas through spontaneous polarization and piezoelectric polarization, has become the mainstream GaN-based HEMT device material structure . [0003] Since the working mode of Al(ln, Ga, Sc)N / GaN devices is mostly a depletion device, it increases power consumption and design complexity in switching circuits. The enhanced GaN-based HEMT device can improve the safety of circuit operation, so the enh...

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Problems solved by technology

The F ion implantation technology in the gate electrode region also has the disadvantage of large loss in the channel, which limits the industrialization and application of GaN-based HEMT devices

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