A magnetic random access memory bottom electrode contact and its preparation method

A technology of random access memory and bottom electrode, which is applied in the manufacture/processing of parts of electromagnetic equipment and electromagnetic devices, and can solve problems such as MRAM device pollution and achieve the effect of optimizing and improving electrical performance

Active Publication Date: 2021-06-29
SHANGHAI CIYU INFORMATION TECH CO LTD
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Problems solved by technology

[0007] In addition, during the over-etching process of the magnetic tunnel junction and its bottom electrode, due to ion bombardment (IonBombardment), copper atoms and their forming compounds will be sputtered to the sidewall of the magnetic tunnel junction and the etched low-k material surface, thereby contaminating the entire MRAM device

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  • A magnetic random access memory bottom electrode contact and its preparation method
  • A magnetic random access memory bottom electrode contact and its preparation method
  • A magnetic random access memory bottom electrode contact and its preparation method

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Embodiment Construction

[0032]In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be noted that all the drawings of the present invention are in simplified form and use inaccurate scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0033] Symbols and indications in this embodiment:

[0034] m x-1 (x≥1): metal connection;

[0035] VIA x (x≥1): through hole;

[0036] A kind of MRAM bottom electrode contact and its preparation method provided by the present invention adopts the metal wiring M x-1 (x≥1) method to make bottom electrode contact (BEC) instead of copper VIA x (x≥1). Wherein, the bottom electrode contact material is non-copper metal, such as: Ta or W, etc., such as figure 2 with image 3 The description includes bu...

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Abstract

The invention provides a bottom electrode contact of a magnetic random access memory and a preparation method thereof. The bottom electrode contact is made on a metal connection line to replace a copper through hole, and the bottom electrode contact material is non-copper metal. The method comprises the following steps: step 1: polishing the surface of the substrate with metal connections, and sequentially forming an etching stopper layer and a dielectric layer on the substrate; step 2: defining a bottom electrode contact pattern graphically on the dielectric layer, etching to form a bottom electrode Electrode contact hole; step 3: filling the bottom electrode contact hole with bottom electrode contact material and grinding until part of the dielectric layer is consumed, thus forming the bottom electrode contact. Since the magnetic tunnel junction and its bottom electrode are fabricated on the surface-polished bottom electrode contact, this effectively avoids the copper pollution and copper diffusion caused by directly fabricating the magnetic tunnel junction in the copper via hole, which is very beneficial to the magnetic field. The optimization and improvement of the electrical performance of the random access memory circuit and the miniaturization of the device.

Description

technical field [0001] The invention relates to a bottom electrode contact (BEC, Bottom ElectrodeContact) of a magnetic random access memory (MRAM) and a preparation method thereof, belonging to the technical field of magnetic random access memory (MRAM) manufacturing. Background technique [0002] In recent years, MRAM using magnetic tunnel junction (MTJ) has been considered as the future solid-state non-volatile memory, which has the characteristics of high-speed reading and writing, large capacity and low energy consumption. Ferromagnetic MTJ is usually a sandwich structure, which has a magnetic memory layer, which can change the magnetization direction to record different data; an insulating tunnel barrier layer in the middle; a magnetic reference layer, located on the other side of the tunnel barrier layer, which The direction of magnetization remains unchanged. [0003] In order to record information in this magnetoresistive element, a writing method based on spin-mom...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/14H01L43/02
CPCH10N52/01H10N50/80
Inventor 张云森
Owner SHANGHAI CIYU INFORMATION TECH CO LTD
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