Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A method for realizing ultra-fine packaging leads based on photolithography and electroplating

An ultra-fine technology for encapsulating leads, applied in circuits, electrical components, electrical solid devices, etc., which can solve the problems of insufficient lead structure strength, complicated capillary design, limited strength of copper materials, etc., to achieve a good flattening effect and overcome structural strength. Insufficient, high coating thickness uniformity effect

Active Publication Date: 2020-02-04
SHANGHAI JIAO TONG UNIV
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These will make the capillary design more complicated and difficult to realize
At the same time, the copper material itself has limited strength. When the wire diameter is significantly reduced, there is a problem of insufficient lead structure strength.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for realizing ultra-fine packaging leads based on photolithography and electroplating
  • A method for realizing ultra-fine packaging leads based on photolithography and electroplating

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] This embodiment provides a method for realizing ultra-fine packaging leads based on photolithography and electroplating, which uses photolithography and electroplating instead of wire bonding to realize the connection between electrodes.

[0047] Described method specifically comprises the steps:

[0048] 1) Coating a layer of 20 μm thick dry film photoresist on the surface of the glass substrate fixed with a 20 μm thick chip and a metal pad;

[0049] In this step, the substrate can be made of glass, and the dry film photoresist can be coated with hot rolling technology; of course, in other embodiments, the thickness of the chip and the thickness of the dry film can be adjusted according to the actual situation.

[0050] 2) Expose and develop the substrate processed in step 1), develop a group of via holes with a size of 20 μm on the metal pads of the chip and the substrate respectively, and use the two via holes facing the chip and the substrate The holes are a group,...

Embodiment 2

[0061] This embodiment provides a method for realizing ultra-fine packaging leads based on photolithography and electroplating, which uses photolithography and electroplating instead of wire bonding to realize the connection between electrodes.

[0062] Described method specifically comprises the steps:

[0063] 1) Coating a layer of 60 μm thick dry film photoresist on the surface of the silicon wafer substrate fixed with a 100 μm thick chip and a metal pad;

[0064] In this step, the substrate can be a silicon wafer, and the dry film photoresist can be coated with a vacuum lamination technique; of course, in other embodiments, the thickness of the chip and the thickness of the dry film can be adjusted according to actual conditions.

[0065] 2) Expose and develop the substrate processed in step 1), and develop via holes with a size of 50 μm on the metal pads of the chip and the substrate respectively, taking the two via holes facing each other on the chip and the substrate as...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
widthaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for realizing ultra-fine packaging leads based on photolithography and electroplating, specifically: coating a layer of dry film photoresist on the surface of a substrate on which chips and metal pads are fixed; Via holes are shown in the dry film on the chip and the metal pad respectively; a layer of seed layer is prepared on the formed surface; a layer of dry film photoresist is coated on the surface of the seed layer; photolithography and development are carried out again, so that The vias above the metal pads and the seed layer below the leads between the vias are exposed; then a layer of copper is electroplated on the surface of the exposed seed layer to form the leads between the metal pads; finally, the dry film as a sacrificial layer is removed Photoresist and seed layer, and finally form the suspended lead interconnect structure. The invention replaces wire bonding with photolithography and electroplating technology to realize the connection between the chip and the substrate pad. The size of the wire is not restricted by the traditional wire bonding process, so that the characteristic size of the wire can be further reduced to that of photolithography. precision.

Description

technical field [0001] The invention relates to the field of microelectronic packaging, in particular to a method for realizing ultra-fine packaging leads based on photolithography and electroplating. Background technique [0002] With the rapid development of the microelectronics industry, the integration of integrated circuit chips has increased, and finer leads and higher numbers of input / output ports have become an inevitable development trend. Currently, the most common interconnect technology is wire bonding, especially ball bonding. When packaging, wire bonding is required on finer pads, and small packages require ultra-fine wire bonding, and the pad pitch must be reduced accordingly. In addition, the need to reduce manufacturing costs and improve performance is also driving the device's ultra-fine pitch and high-density, multiple input / output port packaging. [0003] The main advantages of fine and ultra-fine pitch wire bonding are increased input / output port count...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/49H01L21/48
CPCH01L21/4814H01L21/4846H01L21/4885H01L23/49H01L2224/82001H01L2224/18
Inventor 戴旭涵李冬洋丁桂甫姜太圭
Owner SHANGHAI JIAO TONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com